公开(公告)号：JPH08111453A

公开(公告)日：1996-04-30

申请号：JP24327195

申请日：1995-09-21

Applicant: CONS RIC MICROELETTRONICA

Inventor： SARUBATOORE YUUGO KANPISAANO ,  BIITO RAINEERI

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/316 ,  H01L21/762 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To form a silicon oxide buried layer in a silicon wafer by a method, wherein a recess is formed in the silicon wafer, and light ions are injected at more shallow depth to form air bubbles, and the light ions are evaporated, and a cavity remains in a place of air bubbles for oxidizing the cavity via the recess. SOLUTION: If helium ions 3 are injected into the entire surface 2 of a silicon wafer 1, helium air bubbles 4 are formed at an average permeation depth of the ions 3. If the silicon wafer 1 is heated at a temperature of 700 deg.C or higher, helium diffuses to the surface 2 and a buried layer which is an empty cavity remains in a place of air bubbles 4. A recess or groove 5 is formed, so that its depth is deeper than the depth that the cavity 4 is installed and is divided into an upper portion 6a and a lower portion 6b. If the silicon wafer 1 is heated in a furnace at a dense oxygen concentration, the buried layer containing the cavity 4 is uniformly oxidized and a buried layer 7 of a silicon oxide can be formed in the silicon wafer 1.

公开(公告)号：JPH07221346A

公开(公告)日：1995-08-18

申请号：JP27969094

申请日：1994-10-20

Applicant: CONS RIC MICROELETTRONICA

Inventor： SARUBATOORE YUUGO KANPISAANO ,  SARUBATOORE RONBARUDO ,  JIYUSETSUPE FUERURA ,  ARUBERUTO PORUMAN ,  JIERURASU NIKORAASU FUAN DEN H

IPC: H05B33/10 ,  H01L21/265 ,  H01L33/34 ,  H05B33/12 ,  H05B33/18 ,  H01L33/00

Abstract: PURPOSE: To provide silicon using electroluminescent material as a base and a semiconductor device which is clear of conventional technical problems. CONSTITUTION: Electroluminescent material and a semiconductor electroluminescent device include a mixture layer 3 formed by mixing silicon oxides doped with rare earth element ions so as to allow the material and the device to emit light at room temperature. Electroluminescence is caused by the rare earth element ions. An implant having group V or group III element of the periodic table of elements is supplied to a PN junction 3. The requirement for the obtained structure is that it should be heat-treated at a temperature ranging from 400 deg.C to 1100 deg.C.