公开(公告)号：JPH07221346A

公开(公告)日：1995-08-18

申请号：JP27969094

申请日：1994-10-20

Applicant: CONS RIC MICROELETTRONICA

Inventor： SARUBATOORE YUUGO KANPISAANO ,  SARUBATOORE RONBARUDO ,  JIYUSETSUPE FUERURA ,  ARUBERUTO PORUMAN ,  JIERURASU NIKORAASU FUAN DEN H

IPC: H05B33/10 ,  H01L21/265 ,  H01L33/34 ,  H05B33/12 ,  H05B33/18 ,  H01L33/00

Abstract: PURPOSE: To provide silicon using electroluminescent material as a base and a semiconductor device which is clear of conventional technical problems. CONSTITUTION: Electroluminescent material and a semiconductor electroluminescent device include a mixture layer 3 formed by mixing silicon oxides doped with rare earth element ions so as to allow the material and the device to emit light at room temperature. Electroluminescence is caused by the rare earth element ions. An implant having group V or group III element of the periodic table of elements is supplied to a PN junction 3. The requirement for the obtained structure is that it should be heat-treated at a temperature ranging from 400 deg.C to 1100 deg.C.