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    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT
    1.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT 有权

    公开(公告)号：US20250169238A1

    公开(公告)日：2025-05-22

    申请号：US19031651

    申请日：2025-01-18

    Applicant: EPISTAR CORPORATION

    Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

    IPC: H10H20/83 ,  H01L25/075 ,  H10H20/819 ,  H10H20/824 ,  H10H20/825 ,  H10H20/831 ,  H10H20/841

    Abstract: The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure. The second electrode pad is located on the second-conductivity-type contact structure. The second-conductivity-type contact structure includes a bonding portion, an extension portion, and a connection portion.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200152831A1

    公开(公告)日：2020-05-14

    申请号：US16680207

    申请日：2019-11-11

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu CHANG ,  Hui-Fang KAO ,  Yi-Tang LAI ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Mei Chun LIU ,  Yao-Ru CHANG ,  Yi HISAO

    IPC: H01L33/14 ,  H01L25/075 ,  H01L33/40

    Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT
    5.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT 有权

    公开(公告)号：US20210305456A1

    公开(公告)日：2021-09-30

    申请号：US17211331

    申请日：2021-03-24

    Applicant: EPISTAR CORPORATION

    Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

    IPC: H01L33/36 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075

    Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

    LIGHT-EMITTING DEVICE
    6.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140225138A1

    公开(公告)日：2014-08-14

    申请号：US14174036

    申请日：2014-02-06

    Applicant: Epistar Corporation

    Inventor： Tsung-Hsien YANG ,  Tzu-Chieh HSU ,  Yi-Ming CHEN ,  Yi-Tang LAI ,  Jhih-Jheng YANG ,  Chih-Wei WEI ,  Ching-Sheng CHEN ,  Shih-I CHEN ,  Chia-Liang HSU ,  Ye-Ming HSU

    IPC: H01L33/22

    CPC classification number: H01L33/02 ,  H01L33/0079

    Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

    Abstract translation: 公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层 设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板 朝向透明基板大于35度。

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