公开(公告)号：US20190081213A1

公开(公告)日：2019-03-14

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

IPC: H01L33/38 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

公开(公告)号：US20250169238A1

公开(公告)日：2025-05-22

申请号：US19031651

申请日：2025-01-18

Applicant: EPISTAR CORPORATION

Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

IPC: H10H20/83 ,  H01L25/075 ,  H10H20/819 ,  H10H20/824 ,  H10H20/825 ,  H10H20/831 ,  H10H20/841

Abstract: The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure. The second electrode pad is located on the second-conductivity-type contact structure. The second-conductivity-type contact structure includes a bonding portion, an extension portion, and a connection portion.

公开(公告)号：US20250089400A1

公开(公告)日：2025-03-13

申请号：US18243985

申请日：2023-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hao-Chun LIANG ,  Yi-Shan TSAI ,  Wei-Shan YEOH ,  Yao-Ning CHAN ,  Hsuan-Le LIN ,  Jiong-Chaso SU ,  Shih-Chang LEE ,  Chang-Da TSAI

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/30

Abstract: A semiconductor device, including a base and a semiconductor stack. The semiconductor stack includes a first semiconductor structure located on the base, a second semiconductor structure located on the first semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The active structure includes two confinement layers and a well layer located between the two confinement layers. One of the confinement layers includes Alx1Ga1-x1As, and x1 is equal to or larger than 0.25 and equal to or smaller than 0.4. The well layer includes Inx2Ga1-x2As, and x2 is equal to or larger than 0.25 and equal to or smaller than 0.3. The one of the confinement layers and the well layer respectively have a first thickness in a range of 200 nm to 400 nm and a second thickness in a range of 3 nm to 6 nm.

公开(公告)号：US20210305456A1

公开(公告)日：2021-09-30

申请号：US17211331

申请日：2021-03-24

Applicant: EPISTAR CORPORATION

Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

IPC: H01L33/36 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

公开(公告)号：US20170170375A1

公开(公告)日：2017-06-15

申请号：US15438430

申请日：2017-02-21

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Yao-Ning CHAN ,  Tzu Chieh HSU ,  Yi Ming CHEN ,  Hsin-Chih CHIU ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Chun-Hsien CHANG

IPC: H01L33/62 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US20150144984A1

公开(公告)日：2015-05-28

申请号：US14554488

申请日：2014-11-26

Applicant: Epistar Corporation

Inventor： Yi-Ming CHEN ,  Chun-Yu LIN ,  Tsung-Hsien YANG ,  Tzu-Chieh HSU ,  Kun-De LIN ,  Yao-Ning CHAN ,  Chih-Chiang LU

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

公开(公告)号：US20180006206A1

公开(公告)日：2018-01-04

申请号：US15702286

申请日：2017-09-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Yao-Ning CHAN ,  Tzu Chieh HSU ,  Yi-ming CHEN ,  Hsin-Chih CHIU ,  Chih-Chiang LU ,  Chia-liang HSU ,  Chun-Hsien CHANG

IPC: H01L33/62 ,  H01L33/00 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

公开(公告)号：US20160218247A1

公开(公告)日：2016-07-28

申请号：US14902795

申请日：2013-07-05

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Yao-Ning CHAN ,  Tzu Chieh HSU ,  Yi Ming CHEN ,  Hsin-Chih CHIU ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Chun-Hsien CHANG

IPC: H01L33/48 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

Abstract translation: 本公开提供一种制造发光器件的方法，其包括在第一衬底上提供第一衬底和多个半导体堆叠块，并且多个半导体堆叠块中的每一个包括第一导电型半导体层， 第一导电型半导体层上的发光层和发光层上的第二导电型半导体层; 其中在所述第一基板上存在分隔两个相邻的半导体层叠块的沟槽，并且所述沟槽的宽度小于10μm; 并且进行第一分离步骤以将多个半导体堆叠块的第一半导体堆叠块与第一衬底分离，并将第二半导体堆叠块保持在第一衬底上。

公开(公告)号：US20150060924A1

公开(公告)日：2015-03-05

申请号：US14489169

申请日：2014-09-17

Applicant: EPISTAR CORPORATION

Inventor： Kun-De LIN ,  Yao-Ning CHAN ,  Yi-Ming CHEN ,  Tzu-Chieh HSU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

Abstract translation: 光电子器件包括具有第一表面的半导体堆叠，在第一表面上具有欧姆接触半导体叠层的第一图案的接触层，半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层，其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分，并且所述第一部分比所述第二部分更粗糙。