公开(公告)号：US20180047779A1

公开(公告)日：2018-02-15

申请号：US15794842

申请日：2017-10-26

Applicant: Epistar Corporation

Inventor： Tsung-Hsien YANG ,  Han-Min WU ,  Jhih-Sian WANG ,  Yi-Ming CHEN ,  Tzu-Ghieh HSU

IPC: H01L27/15 ,  H01L33/08 ,  H01L29/06 ,  H01L33/38 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

公开(公告)号：US20180012929A1

公开(公告)日：2018-01-11

申请号：US15711737

申请日：2017-09-21

Applicant: Epistar Corporation

Inventor： Shao-Ping LU ,  Yi-Ming CHEN ,  Yu-Ren PENG ,  Chun-Yu LIN ,  Chun-Fu TSAI ,  Tzu-Chieh HSU

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

公开(公告)号：US20150060924A1

公开(公告)日：2015-03-05

申请号：US14489169

申请日：2014-09-17

Applicant: EPISTAR CORPORATION

Inventor： Kun-De LIN ,  Yao-Ning CHAN ,  Yi-Ming CHEN ,  Tzu-Chieh HSU

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

Abstract translation: 光电子器件包括具有第一表面的半导体堆叠，在第一表面上具有欧姆接触半导体叠层的第一图案的接触层，半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层，其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分，并且所述第一部分比所述第二部分更粗糙。

公开(公告)号：US20140048768A1

公开(公告)日：2014-02-20

申请号：US13970949

申请日：2013-08-20

Applicant: EPISTAR CORPORATION

Inventor： Rong-Ren LEE ,  Chien-Fu HUANG ,  Shih-Chang LEE ,  Yi-Ming CHEN ,  Shiuan-Leh LIN

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06

Abstract: A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Abstract translation: 本文公开的发光器件包括衬底，形成在衬底上并包括第一量子阱，第二量子阱和设置在第一量子阱和第二量子阱之间的势垒层的有源层。 阻挡层包括与第一量子阱相邻的第一区域，与第二量子阱相邻的第三区域和设置在第一区域和第三区域之间并包含Sb的第二区域。

公开(公告)号：US20230014825A1

公开(公告)日：2023-01-19

申请号：US17947526

申请日：2022-09-19

Applicant: EPISTAR CORPORATION

Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

IPC: H01L33/20 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

公开(公告)号：US20210119078A1

公开(公告)日：2021-04-22

申请号：US17114012

申请日：2020-12-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/40

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US20200066935A1

公开(公告)日：2020-02-27

申请号：US16673312

申请日：2019-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/40

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US20180331151A1

公开(公告)日：2018-11-15

申请号：US16042769

申请日：2018-07-23

Applicant: Epistar Corporation

Inventor： Tsung-Hsien YANG ,  Han-Min WU ,  Jhih-Sian WANG ,  Yi-Ming CHEN ,  Tzu-Ghieh HSU

IPC: H01L27/15 ,  H01L29/06 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

公开(公告)号：US20150137169A1

公开(公告)日：2015-05-21

申请号：US14546571

申请日：2014-11-18

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Tsung-Hsien YANG

IPC: H01L33/38 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/42 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract translation: 半导体发光器件包括具有第一表面的半导体堆叠，其中第一表面包括多个突起部分和多个凹部; 所述第一电极在所述第一表面上并与所述半导体叠层电连接; 在所述第一表面上的第二电极并与所述半导体堆叠电连接; 以及保形地覆盖所述第一表面和所述第一电极和所述半导体堆叠之间的透明导电层，其中所述第一电极包括第一接合部分和第一延伸部分，并且所述第一延伸部分在所述第一接合部分和所述透明导电层之间 并保形地覆盖透明导电层。

公开(公告)号：US20140070250A1

公开(公告)日：2014-03-13

申请号：US13856220

申请日：2013-04-03

Applicant: Epistar Corporation

Inventor： Shih-I CHEN ,  Tsung-Xian LEE ,  Yi-Ming CHEN ,  Wei-Yu CHEN ,  Ching- Pei LIN ,  Min-Hsun HSIEH ,  Cheng-Nan HAN ,  Tien-Yang WANG ,  Hsing-Chao CHEN ,  Hsin-Mao LIU ,  Zong-Xi CHEN ,  Tzu-Chieh HSU ,  Chien-Fu HUANG ,  Yu-Ren PENG

IPC: H01L33/50

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。