公开(公告)号：EP0413482B1

公开(公告)日：1997-03-12

申请号：EP90308571.0

申请日：1990-08-03

Applicant: GALILEO ELECTRO-OPTICS CORP.

Inventor： Tasker, William G. ,  Horton, Jerry R.

IPC: H01J43/24 ,  H01J9/12

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J49/025 ,  H01J2201/32 ,  H01J2201/3423

公开(公告)号：EP0413482A3

公开(公告)日：1991-07-10

申请号：EP90308571.0

申请日：1990-08-03

Applicant: GALILEO ELECTRO-OPTICS CORP.

Inventor： Tasker, William G. ,  Horton, Jerry R.

IPC: H01J43/24 ,  H01J9/12

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J49/025 ,  H01J2201/32 ,  H01J2201/3423

Abstract: The invention is directed to continuous dynodes formed by thin film processing techniques. According to one embodiment of the invention, a continuous dynode is disclosed in which at least one layer is formed by reacting a vapour in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapour deposition kinetics dominated by interfacial processes between the vapour and the substrate. In another embodiment the surface of a bulk semiconductor or substrate is subjected to a reactive atmosphere at a temperature and pressure sufficient to result in a reaction modifying the surface of the substrate. In yet another embodiment a continuous dynode is formed by liquid phase deposition of a dynode material into the substrate from a supersaturated solution. The resulting devices exhibit conductive and emissive properties suitable for electron multiplication in CEM, MCP and MEM applications.

公开(公告)号：EP0413482A2

公开(公告)日：1991-02-20

申请号：EP90308571.0

申请日：1990-08-03

Applicant: GALILEO ELECTRO-OPTICS CORP.

Inventor： Tasker, William G. ,  Horton, Jerry R.

IPC: H01J43/24 ,  H01J9/12

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J49/025 ,  H01J2201/32 ,  H01J2201/3423

Abstract: The invention is directed to continuous dynodes formed by thin film processing techniques. According to one embodiment of the invention, a continuous dynode is disclosed in which at least one layer is formed by reacting a vapour in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapour deposition kinetics dominated by interfacial processes between the vapour and the substrate. In another embodiment the surface of a bulk semiconductor or substrate is subjected to a reactive atmosphere at a temperature and pressure sufficient to result in a reaction modifying the surface of the substrate. In yet another embodiment a continuous dynode is formed by liquid phase deposition of a dynode material into the substrate from a supersaturated solution. The resulting devices exhibit conductive and emissive properties suitable for electron multiplication in CEM, MCP and MEM applications.

Abstract translation: 本发明涉及通过薄膜处理技术形成的连续倍增极。 根据本发明的一个实施方案，公开了一种连续的倍增极，其中至少一个层是通过在基板存在下使蒸汽反应形成的，该温度和压力足以导致化学气相沉积动力学 蒸气和底物。 在另一个实施方案中，体积半导体或衬底的表面在足以导致改变衬底表面的反应的温度和压力下经受反应性气氛。 在另一个实施方案中，通过从过饱和溶液中将倍增极材料液相沉积到衬底中形成连续的倍增极。 所得到的器件表现出适用于CEM，MCP和MEM应用中电子倍增的导电性和发射特性。