公开(公告)号：EP4531112A1

公开(公告)日：2025-04-02

申请号：EP24163163.9

申请日：2024-03-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： KAMMLER, Thorsten E. ,  BAARS, Peter ,  ZIER, Manfred Michael

IPC: H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  B82Y10/00

Abstract: The present disclosure relates to a spin-qubit semiconductor devices and methods of manufacturing. The spin-qubit devices include on an SOI substrate: a plurality of barrier gates (12); a plurality of spin qubit gates (14), under which quantum dots are induced, and which are interdigitated with the plurality of barrier gates; two access gates (16) on opposing sides of the plurality of barrier gates, under which reservoirs are induced, a source region (22) and a drain region (22).

公开(公告)号：EP4287262A1

公开(公告)日：2023-12-06

申请号：EP22201887.1

申请日：2022-10-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： BAARS, Peter ,  ONTALUS, Viorel ,  TAILOR, Ketankumar H. ,  ZIER, Michael ,  KENNEY, Crystal R. ,  HOLT, Judson

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/737 ,  H01L21/331 ,  H01L21/762 ,  H01L27/06 ,  H01L27/12

Abstract: A structure comprising: a semiconductor substrate including a trench; a first semiconductor layer including a portion adjacent to the trench; a dielectric layer between the first semiconductor layer and the semiconductor substrate, the dielectric layer having an interface with the first semiconductor layer; a second semiconductor layer in the trench, the second semiconductor layer including a first portion that is recessed relative to the interface; and a vertical heterojunction bipolar transistor including a collector in the first portion of the second semiconductor layer.