公开(公告)号：EP4401124A1

公开(公告)日：2024-07-17

申请号：EP23202558.5

申请日：2023-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： LEVY, Mark D. ,  CUCCI, Brett T. ,  PORTER, Spencer H. ,  SHARMA, Santosh

IPC: H01L23/00 ,  H01L23/58 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L23/564 ,  H01L23/585 ,  H01L29/7786 ,  H01L29/2003 ,  H01L29/1066

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures and methods of manufacture. The structure includes: a semiconductor substrate; a channel layer above the semiconductor substrate; a trench within the channel layer, extending to the semiconductor substrate; and a moisture barrier layer lining sidewalls and a bottom surface of the trench.

公开(公告)号：EP4539125A1

公开(公告)日：2025-04-16

申请号：EP24166603.1

申请日：2024-03-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： CUCCI, Brett T. ,  DEANGELIS, Jacob M. ,  PORTER, Spencer H. ,  WILLS, Trevor S. ,  LEVY, Mark D.

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; and a field plate connected to a source region of the gate structure. The gate metal and the field plate include a same material.

公开(公告)号：EP4550395A1

公开(公告)日：2025-05-07

申请号：EP24170682.9

申请日：2024-04-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： DEANGELIS, Jacob M. ,  WILLS, Trevor S. ,  LEVY, Mark D. ,  PORTER, Spencer H. ,  CUCCI, Brett T. ,  KRISHNASAMY, Rajendran

IPC: H01L21/76 ,  H01L21/762

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures and methods of manufacture. The structure includes: a stack of semiconductor materials; a semiconductor substrate under the stack of semiconductor materials; a trench filled with in insulator material; and a damaged region of the stack of semiconductor materials extending from at least a bottom of the insulator material to the semiconductor substrate.