公开(公告)号：EP4550422A1

公开(公告)日：2025-05-07

申请号：EP24168351.5

申请日：2024-04-04

Applicant: GlobalFoundries U.S. Inc.

Inventor： BENTLEY, Steven J. ,  SHARMA, Santosh ,  KANTAROVSKY, Johnatan A. ,  LEVY, Mark D. ,  ZIERAK, Michael J.

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/10 ,  H01L29/423

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a gate structure; a first barrier layer under and adjacent to the gate structure; and a second barrier layer over the first barrier layer and which is adjacent to the gate structure.

公开(公告)号：EP4383344A3

公开(公告)日：2024-08-21

申请号：EP23206288.5

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  ZIERAK, Michael J. ,  LEVY, Mark D. ,  BENTLEY, Steven J.

IPC: H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/7783 ,  H01L29/7781 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/402

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure (19a) adjacent to a first source region (23a); a second gate structure (19b) adjacent to a second source region (23b); and field plates (22) adjacent to the first gate structure, the second gate structure and a surface of an active layer (20) of the first gate structure and the second gate structure.

公开(公告)号：EP4383344A2

公开(公告)日：2024-06-12

申请号：EP23206288.5

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  ZIERAK, Michael J. ,  LEVY, Mark D. ,  BENTLEY, Steven J.

IPC: H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L29/7786 ,  H01L29/7783 ,  H01L29/7781 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure (19a) adjacent to a first source region (23a); a second gate structure (19b) adjacent to a second source region (23b); and field plates (22) adjacent to the first gate structure, the second gate structure and a surface of an active layer (20) of the first gate structure and the second gate structure.

公开(公告)号：EP4379811A3

公开(公告)日：2024-09-04

申请号：EP23199260.3

申请日：2023-09-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  KRISHNASAMY, Rajendran ,  KANTAROVSKY, Johnatan A.

IPC: H01L29/778 ,  H01L21/337 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/1066 ,  H01L29/404 ,  H01L29/0657 ,  H01L29/66462

Abstract: Semiconductor structures and, more particularly, a high-electron-mobility transistor and methods of manufacture thereof are disclosed. The structure includes: a gate structure (18, 22, 28); and a channel region (14, 16) under the gate structure, the channel region having a first portion including a first thickness and a second portion having a second thickness greater than the first thickness, the second portion being positioned remotely from the gate structure.

公开(公告)号：EP4401124A1

公开(公告)日：2024-07-17

申请号：EP23202558.5

申请日：2023-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： LEVY, Mark D. ,  CUCCI, Brett T. ,  PORTER, Spencer H. ,  SHARMA, Santosh

IPC: H01L23/00 ,  H01L23/58 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L23/564 ,  H01L23/585 ,  H01L29/7786 ,  H01L29/2003 ,  H01L29/1066

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures and methods of manufacture. The structure includes: a semiconductor substrate; a channel layer above the semiconductor substrate; a trench within the channel layer, extending to the semiconductor substrate; and a moisture barrier layer lining sidewalls and a bottom surface of the trench.

公开(公告)号：EP4354511A2

公开(公告)日：2024-04-17

申请号：EP23195277.1

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZIERAK, Michael J. ,  BENTLEY, Steven J. ,  SHARMA, Santosh ,  LEVY, Mark D. ,  KANTAROVSKY, Johnatan A.

IPC: H01L29/41 ,  H01L29/10 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/402 ,  H01L29/1066

Abstract: A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.

公开(公告)号：EP4535429A1

公开(公告)日：2025-04-09

申请号：EP24164396.4

申请日：2024-03-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： LEVY, Mark D. ,  KANTAROVSKY, Johnatan A. ,  ZIERAK, Michael J. ,  SHARMA, Santosh ,  BENTLEY, Steven J.

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/51 ,  H01L29/10

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a semiconductor substrate; at least one insulator film over the semiconductor substrate, the at least one insulator film including a recess; and a field plate extending into the at least one recess and over the at least one insulator film.

公开(公告)号：EP4379811A2

公开(公告)日：2024-06-05

申请号：EP23199260.3

申请日：2023-09-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  KRISHNASAMY, Rajendran ,  KANTAROVSKY, Johnatan A.

IPC: H01L29/778 ,  H01L21/337 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/1066 ,  H01L29/404 ,  H01L29/0657 ,  H01L29/66462

Abstract: Semiconductor structures and, more particularly, a high-electron-mobility transistor and methods of manufacture thereof are disclosed. The structure includes: a gate structure (18, 22, 28); and a channel region (14, 16) under the gate structure, the channel region having a first portion including a first thickness and a second portion having a second thickness greater than the first thickness, the second portion being positioned remotely from the gate structure.

公开(公告)号：EP4346101A1

公开(公告)日：2024-04-03

申请号：EP23190154.7

申请日：2023-08-08

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh

IPC: H03K5/156 ,  H03K17/30

Abstract: The present disclosure relates to a circuit and, more particularly, to comparator circuits used with a depletion mode device and methods of operation. The circuit includes: a comparator; a transistor connected to an output of the comparator; and a depletion mode device connected to ground and comprising a control gate connected to the transistor.

公开(公告)号：EP4354511A3

公开(公告)日：2024-08-07

申请号：EP23195277.1

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZIERAK, Michael J. ,  BENTLEY, Steven J. ,  SHARMA, Santosh ,  LEVY, Mark D. ,  KANTAROVSKY, Johnatan A.

IPC: H01L29/41 ,  H01L29/778 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/402 ,  H01L29/1066

Abstract: A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.