公开(公告)号：AU2021399002B2

公开(公告)日：2025-02-06

申请号：AU2021399002

申请日：2021-12-13

Applicant: IBM

Inventor： ABRAHAM DAVID ,  DIAL OLIVER ,  COTTE JOHN ,  PETRARCA KEVIN SHAWN

IPC: H01L21/768 ,  G06N10/40 ,  H01L23/00 ,  H01L25/065

Abstract: A device (500) comprises a first chip (508) having a first chip front-side and a first chip back-side, a qubit chip (504) having a qubit chip front-side and a qubit chip back-side, the qubit chip front-side operatively coupled to the first chip front-side with a set of bump-bonds (506), a set of through-silicon vias (TSVs) connected to at least one of the first chip back-side or the qubit chip back-side, and a cap wafer (502) that is metal bonded to at least one of the qubit chip back-side or the first chip back-side. Preferably, the qubits and the TSVs are superconducting, and the cap wafer features a cavity that comprises a metal coating on its inside surface for electromagnetic shielding.

公开(公告)号：AT479188T

公开(公告)日：2010-09-15

申请号：AT02807323

申请日：2002-11-15

Applicant: IBM

Inventor： ABRAHAM DAVID ,  TROUILLOUD PHILIP

IPC: G11C11/15 ,  G11C11/18 ,  G11C7/02 ,  G11C7/04 ,  G11C11/00 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.