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公开(公告)号:JPS54112173A
公开(公告)日:1979-09-01
申请号:JP78479
申请日:1979-01-10
Applicant: IBM
IPC: H01L21/027 , H01J37/21 , H01J37/304
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公开(公告)号:DE2962859D1
公开(公告)日:1982-07-08
申请号:DE2962859
申请日:1979-01-24
Applicant: IBM
IPC: H01L21/027 , H01J37/21 , H01J37/304
Abstract: A method and apparatus for applying focus correction to an E-beam or charged particle system to compensate for wafer warp and mask tilt. In an electron beam system including a registration system which measures the position of four registration marks with the beam and calculates the apparent magnification error of a given chip, means are also provided for using magnification and rotation error information to calculate a height error factor and to apply a compensating current to a dynamic focusing coil of the electron beam to move the effective beam focal plane to a position which matches the wafer or mask plane at each chip site.
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