公开(公告)号：JPS54112173A

公开(公告)日：1979-09-01

申请号：JP78479

申请日：1979-01-10

Applicant: IBM

Inventor： ALBRECHT DREW EDWARD ,  DORAN SAMUEL KAY ,  MICHAIL MICHEL SALIB ,  YOURKE HANNON STANLEY

IPC: H01L21/027 ,  H01J37/21 ,  H01J37/304

公开(公告)号：DE3269891D1

公开(公告)日：1986-04-17

申请号：DE3269891

申请日：1982-11-23

Applicant: IBM

Inventor： BLAIR WILLIAM WOLF ,  DORAN SAMUEL KAY ,  LANGNER GUENTHER OTTO

IPC: H01J37/21 ,  G02B7/28 ,  H01J37/22 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027 ,  G03B41/00 ,  G02B7/11

公开(公告)号：DE2962859D1

公开(公告)日：1982-07-08

申请号：DE2962859

申请日：1979-01-24

Applicant: IBM

Inventor： ALBRECHT DREW EDWARD ,  DORAN SAMUEL KAY ,  MICHAIL MICHEL SALIB ,  YOURKE HANNON STANLEY

IPC: H01L21/027 ,  H01J37/21 ,  H01J37/304

Abstract: A method and apparatus for applying focus correction to an E-beam or charged particle system to compensate for wafer warp and mask tilt. In an electron beam system including a registration system which measures the position of four registration marks with the beam and calculates the apparent magnification error of a given chip, means are also provided for using magnification and rotation error information to calculate a height error factor and to apply a compensating current to a dynamic focusing coil of the electron beam to move the effective beam focal plane to a position which matches the wafer or mask plane at each chip site.

公开(公告)号：DE3878751T2

公开(公告)日：1993-09-23

申请号：DE3878751

申请日：1988-05-03

Applicant: IBM

Inventor： DAVIS DONALD EUGENE ,  DORAN SAMUEL KAY ,  PERKINS MERLYN HAROLD ,  PFEIFFER HANS CHRISTIAN

IPC: G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J37/302 ,  H01J37/30

Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system (10) which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field (37) provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field (36) confined to local areas on the workpiece (7), which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field, because the quality requirements demanded from the shaped electron beam(B) are less for detecting the locations of such registration (39) marks at the various locations on the wafer.

公开(公告)号：DE3878751D1

公开(公告)日：1993-04-08

申请号：DE3878751

申请日：1988-05-03

Applicant: IBM

Inventor： DAVIS DONALD EUGENE ,  DORAN SAMUEL KAY ,  PERKINS MERLYN HAROLD ,  PFEIFFER HANS CHRISTIAN

IPC: G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J37/302 ,  H01J37/30

Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system (10) which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field (37) provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field (36) confined to local areas on the workpiece (7), which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field, because the quality requirements demanded from the shaped electron beam(B) are less for detecting the locations of such registration (39) marks at the various locations on the wafer.