公开(公告)号：SG77259A1

公开(公告)日：2000-12-19

申请号：SG1999003558

申请日：1999-07-17

Applicant: IBM

Inventor： ALLEN ARCHIBALD ,  WHITE FRANCIS R ,  RANKIN JED H ,  MANN RANDY W ,  LASKY JEROME B

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/311

Abstract: A buried butted contact and method for its fabrication are provided which includes a substrate having dopants of a first conductivity type and having shallow trench isolation. Dopants of a second conductivity type are located in the bottom of an opening in said substrate. Ohmic contact is provided between the dopants in the substrate and the low diffusivity dopants that is located on a side wall of the opening. The contact is a metal silicide, metal and/or metal alloy.