公开(公告)号：CA2061120A1

公开(公告)日：1992-10-30

申请号：CA2061120

申请日：1992-02-12

Applicant: IBM

Inventor： BEILSTEIN KENNETH E JR ,  BERTIN CLAUDE L ,  WHITE FRANCIS R

IPC: C23C16/06 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/47 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L21/027

Abstract: BU9-89-027 A method is described for selectively masking sidewall regions of a concave surface formed in a semiconductor body, the method comprising the steps of: forming a conformal layer of masking material on a sidewall of the concave structure; emplacing in the concave structure, a selectively removable material that partially fills the concave structure, an upper surface of the material determining the edge of a region of the concave structure to be masked; removing a portion of the conformal layer above the upper surface of the selectively removable material; and removing the selectively removable material to leave a region of remaining conformal material as a mask.

公开(公告)号：CA1209280A

公开(公告)日：1986-08-05

申请号：CA485177

申请日：1985-06-25

Applicant: IBM

Inventor： KINNEY WAYNE I ,  KOBURGER CHARLES W III ,  LASKY JEROME B ,  NESBIT LARRY A ,  TROUTMAN RONALD R ,  WHITE FRANCIS R

IPC: H01L27/08 ,  H01L21/033 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06

Abstract: PROCESS OF MAKING DUAL WELL CMOS SEMICONDUCTOR STRUCTURE WITH ALIGNED FIELD-DOPINGS USING SINGLE MASKING STEP A process for making a CMOS dual-well semiconductor structure with field isolation doping, wherein only a single lithographic masking step is required for providing self-alignment both of the wells to each other and also of the field isolation doping regions to the wells. The lithographic masking step forms a well mask and defines an oxidation barrier which acts as: an implant mask (absorber) during the ion-implantation of a field dopant of one type; an oxidation barrier over one well during the oxidation of the opposite-type well to form over the one well a sacrificial oxide layer which forms the alignment marks for subsequent formation of the field-doping regions; and a dopant-transmitter during the ion-implanation of an opposite-type field dopant which is simultaneously absorbed by the sacrificial oxide. As a result, there are formed field-doped oxide layers self-aligned to the wells so that, with a subsequent masking step, oxide field isolations are defined over the doped oxide layers. A heat cycle is then used to drive the field dopants into the corresponding field-doping regions.

公开(公告)号：SG77259A1

公开(公告)日：2000-12-19

申请号：SG1999003558

申请日：1999-07-17

Applicant: IBM

Inventor： ALLEN ARCHIBALD ,  WHITE FRANCIS R ,  RANKIN JED H ,  MANN RANDY W ,  LASKY JEROME B

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/311

Abstract: A buried butted contact and method for its fabrication are provided which includes a substrate having dopants of a first conductivity type and having shallow trench isolation. Dopants of a second conductivity type are located in the bottom of an opening in said substrate. Ohmic contact is provided between the dopants in the substrate and the low diffusivity dopants that is located on a side wall of the opening. The contact is a metal silicide, metal and/or metal alloy.