公开(公告)号：DE69300154D1

公开(公告)日：1995-06-22

申请号：DE69300154

申请日：1993-06-03

Applicant: IBM

Inventor： YOSHIDA TOSHIHIKO ,  ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI

IPC: G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: The present invention provides a technique for preventing leak current caused by incident light falling on a semiconductor layer which forms a channel in a thin film transistor (TFT). An insulating layer is formed between said semiconductor layer and at least one of the source and drain electrodes of the TFT, over a distance which is longer than a hole-electron recombination distance from all the edges of at least one of the source and drain electrodes overlapping the semiconductor layer.

公开(公告)号：JPH0651343A

公开(公告)日：1994-02-25

申请号：JP14785992

申请日：1992-06-09

Applicant: IBM

Inventor： ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE: To provide a thin film transistor(TFT) active matrix liquid crystal display device of high display quality by forming an insulating layer between one of a source electrode and a drain electrode for a long distance longer than the hole-electron recoupling distance from all edges superposed on a semiconductor layer out of edges of at least one of the source electrode and the drain electrode. CONSTITUTION: When light is thrown in the direction of an arrow 15 with a TFT 1 off, holes and electrons are excited in an area 12, which is not covered with light shielding source and drain electrodes 7 and 8, of a semiconductor layer 5 and are migrated toward the connection area between the source electrode 7 and the semiconductor layer 5 and that between the drain electrode 8 and the semiconductor layer 5. An insulating layer 6 is provided between the semiconductor layer 5 and the source electrode 7 and between the semiconductor layer 5 and the drain electrode 8 for a distance D between these areas and the area. As the result, holes and electronic are coupled again within the distance D and don't reach the source electrode 7 and the drain electrode 8.

公开(公告)号：JPH04347821A

公开(公告)日：1992-12-03

申请号：JP13866791

申请日：1991-05-15

Applicant: IBM

Inventor： ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30

Abstract: PURPOSE: To provide a liquid crystal display device which has a redundant constitution and secures a high numerical aperture. CONSTITUTION: In this liquid crystal display device where picture elements are arranged at intersections between scanning lines and data lines like a matrix and storage capacity lines to give storage capacities to picture elements are provided, scanning lines 31 are adjacently arranged with two lines as a unit, and picture elements 34 are adjacently arranged with two elements as a unit, and a storage capacity line 36 is provided between scanning lines in the same direction as scanning lines correspondingly to each two adjacently arranged picture elements, and two storage capacities 35 are arranged for each storage capacity line correspondingly to two adjacent picture elements, and one auxiliary storage capacity 37 shared between two adjacent picture elements is arranged.

公开(公告)号：DE69300154T2

公开(公告)日：1995-12-07

申请号：DE69300154

申请日：1993-06-03

Applicant: IBM

Inventor： YOSHIDA TOSHIHIKO ,  ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI

IPC: G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: The present invention provides a technique for preventing leak current caused by incident light falling on a semiconductor layer which forms a channel in a thin film transistor (TFT). An insulating layer is formed between said semiconductor layer and at least one of the source and drain electrodes of the TFT, over a distance which is longer than a hole-electron recombination distance from all the edges of at least one of the source and drain electrodes overlapping the semiconductor layer.

公开(公告)号：BR9201561A

公开(公告)日：1993-01-05

申请号：BR9201561

申请日：1992-04-28

Applicant: IBM

Inventor： ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09F9/35