公开(公告)号：EP0629895B1

公开(公告)日：1997-12-29

申请号：EP94303692

申请日：1994-05-24

Applicant: IBM

Inventor： FUJII YOSHIHARU ,  YOSHIDA TOSHIHIKO ,  KITAHARA HIROAKI

IPC: G02F1/133 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/136

CPC classification number: G02F1/1345 ,  G02F1/136204

公开(公告)号：JPH01219721A

公开(公告)日：1989-09-01

申请号：JP3545688

申请日：1988-02-19

Applicant: IBM

Inventor： FURUTA KAORU ,  YOSHIDA TOSHIHIKO

IPC: H01L21/3205 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE: To assure the degree of freedom in the positions where contact holes are set by depositing a vapor phase row insulating film having apertures on the metallic film on a substrate and denaturing the surface part of the metallic film in the apertures of this vapor phase grown insulating film, thereby forming an anodically oxidized film. CONSTITUTION: The anodically oxidizable metallic film 1 consisting of an alloy containing tantalum is formed on a transparent glass substrate 5. The insulating film 2 consisting of SiOx is then grown in a vapor phase by a prescribed film thickness. Next, only the regions requiring anodic oxidation are provided with the apertures of a photoresist 3 and, thereafter, the vapor phase grown insulating film of the regions requiring the anodic oxidation is removed, by which the apertures 2A of the vapor phase grown insulating film 2 are formed. The substrate 5 deposited with the metallic film 1, the insulating film 2 and the photoresist 3 is immersed into an electrolyte suitable for the metallic film 1. A current is then passed to the metallic film 1 as anode and platinum, etc., as cathode. The anodically oxidized film 4 is formed only on the metallic film 1 exposed in the apertures 2A and the degree of freedom in the positions where the contact holes are set is assured when this structural body is used for a liquid crystal display device.

公开(公告)号：JPH08184809A

公开(公告)日：1996-07-16

申请号：JP32315894

申请日：1994-12-26

Applicant: IBM

Inventor： KIMURA YASUHIRO ,  NISHI SATORU ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G09G3/20 ,  G09G3/36

Abstract: PURPOSE: To display an image with a fixed quality on a liquid crystal display device regardless of the change of length of the period for applying a voltage of the same polarity to the liquid crystal. CONSTITUTION: The length of one period of a horizontal synchronous signal inputted from an information processing device to a LCD unit is counted, and on the basis of the length of one period and whether a gate overlap scan is performed or not, the amplitude and center of amplitude of the data voltage applied to a liquid crystal are corrected in such a manner that the amplitude of the data voltage is increased, and the correction quantity to the center of amplitude is increased as the length of the period of applying the data voltage of the same polarity to the liquid crystal is shortened. Thus, in both cases of a relatively long period and a short period, the absolute values V of the voltage between electrodes before and after TFT is OFF are equal to each other regardless of the polarity of the data voltage applied to the liquid crystal.

公开(公告)号：JPH06301045A

公开(公告)日：1994-10-28

申请号：JP6384793

申请日：1993-03-23

Applicant: IBM

Inventor： YOSHIDA TOSHIHIKO ,  FUJII YOSHIHARU

IPC: G02F1/1345

Abstract: PURPOSE: To provide a high-definition active matrix type liquid crystal display device with high display quality by reducing an excessive space by excluding electrodes from one side of two transparent boards, and providing only a transfer in the remaining space. CONSTITUTION: On the side of a liquid crystal injection port 14, plural transfers 19 are provided outside a seal 24 similarly to the other side, a wiring pattern is formed from the transfers 19 on the side of the liquid crystal injection port 14 to the inside while crossing the seal 24 and connected with an extended conductor 21 formed parallelly to the seal 24 and this extended conductor 21 is pulled out to the side, where a signal line pull-out electrode 17 is provided, while crossing the seal 24 again and connected with a transfer pull-out electrode 20 formed on this side.

公开(公告)号：JPH0713185A

公开(公告)日：1995-01-17

申请号：JP14876293

申请日：1993-06-21

Applicant: IBM

Inventor： KITAHARA HIROAKI ,  FUJII YOSHIHARU ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G02F1/1345 ,  G02F1/1362

Abstract: PURPOSE: To prevent dielectric breakdown of the storage capacitor of a liquid crystal display element connected to a specific gate line of a liquid crystal display device. CONSTITUTION: A display area 2 where plural liquid crystal display elements 10 are formed like a matrix and a peripheral area 3 enclosing the display area 2 are included, and the display area 2 includes plural gate lines 4 arranged in parallel with each other and plural reference voltage lines 9 which are formed between gate lines 4 and act as one side electrodes of storage capacitors of liquid crystal display elements 10, and the peripheral area 3 includes plural connection terminals 6 which are separated from each other by a distance L2 shorter than a distance L1 between adjacent gate lines 4 in the display area 2, and connection terminals 6 are divided into plural groups 6A and 6B, and gate lines are connected to connection terminals 6, respectively, and a short-circuit line 11 is formed along the peripheral area 3 so as to short-circuit the connection terminals 6. In this liquid crystal display device, a conductive line 12 extended from the short-circuit line 11 is formed between an area 7 between groups 6A and 6B and the reference voltage line 9 facing the area 7.

公开(公告)号：JPH0651343A

公开(公告)日：1994-02-25

申请号：JP14785992

申请日：1992-06-09

Applicant: IBM

Inventor： ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE: To provide a thin film transistor(TFT) active matrix liquid crystal display device of high display quality by forming an insulating layer between one of a source electrode and a drain electrode for a long distance longer than the hole-electron recoupling distance from all edges superposed on a semiconductor layer out of edges of at least one of the source electrode and the drain electrode. CONSTITUTION: When light is thrown in the direction of an arrow 15 with a TFT 1 off, holes and electrons are excited in an area 12, which is not covered with light shielding source and drain electrodes 7 and 8, of a semiconductor layer 5 and are migrated toward the connection area between the source electrode 7 and the semiconductor layer 5 and that between the drain electrode 8 and the semiconductor layer 5. An insulating layer 6 is provided between the semiconductor layer 5 and the source electrode 7 and between the semiconductor layer 5 and the drain electrode 8 for a distance D between these areas and the area. As the result, holes and electronic are coupled again within the distance D and don't reach the source electrode 7 and the drain electrode 8.

公开(公告)号：JPH04347821A

公开(公告)日：1992-12-03

申请号：JP13866791

申请日：1991-05-15

Applicant: IBM

Inventor： ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI ,  YOSHIDA TOSHIHIKO

IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30

Abstract: PURPOSE: To provide a liquid crystal display device which has a redundant constitution and secures a high numerical aperture. CONSTITUTION: In this liquid crystal display device where picture elements are arranged at intersections between scanning lines and data lines like a matrix and storage capacity lines to give storage capacities to picture elements are provided, scanning lines 31 are adjacently arranged with two lines as a unit, and picture elements 34 are adjacently arranged with two elements as a unit, and a storage capacity line 36 is provided between scanning lines in the same direction as scanning lines correspondingly to each two adjacently arranged picture elements, and two storage capacities 35 are arranged for each storage capacity line correspondingly to two adjacent picture elements, and one auxiliary storage capacity 37 shared between two adjacent picture elements is arranged.

公开(公告)号：DE69407486D1

公开(公告)日：1998-02-05

申请号：DE69407486

申请日：1994-05-24

Applicant: IBM

Inventor： FUJII YOSHIHARU ,  YOSHIDA TOSHIHIKO ,  KITAHARA HIROAKI

IPC: G02F1/133 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/136

Abstract: A liquid crystal display device includes a display region (2) in which a plurality of liquid crystal display elements (10) are formed in a matrix and a peripheral region (3) enclosing the display region (2). The display region (2) includes gate lines (6) arranged in parallel with one another and reference voltage lines (9) each of which is formed between the gate lines (6) and serves as an electrode for a storage capacitor of each of the liquid crystal display elements (10). The peripheral region (3) includes connecting terminals (6) which are separated from each other by distance less than a distance between adjacent gate lines (6) in the display region (2). The connecting terminals (6) are arranged in groups. The gate lines (4) each connected to said connecting terminals (6). A short-circuit line (11) is formed along said peripheral region (3) so that the connecting terminals (6) are short-circuited. A conductor extending from the short-circuit line (11) is formed between a region (7) between the groups and the reference voltage lines (9) which face the region (7). This prevents dielectric breakdown for a storage capacitor of a liquid crystal display element connected to a predetermined gate line in a liquid crystal display device.

公开(公告)号：DE69300154D1

公开(公告)日：1995-06-22

申请号：DE69300154

申请日：1993-06-03

Applicant: IBM

Inventor： YOSHIDA TOSHIHIKO ,  ATSUMI MASAKAZU ,  MATSUMOTO TAKESHI

IPC: G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: The present invention provides a technique for preventing leak current caused by incident light falling on a semiconductor layer which forms a channel in a thin film transistor (TFT). An insulating layer is formed between said semiconductor layer and at least one of the source and drain electrodes of the TFT, over a distance which is longer than a hole-electron recombination distance from all the edges of at least one of the source and drain electrodes overlapping the semiconductor layer.

公开(公告)号：CA1304807C

公开(公告)日：1992-07-07

申请号：CA592101

申请日：1989-02-24

Applicant: IBM

Inventor： FURUTA KAORU ,  YOSHIDA TOSHIHIKO

IPC: H01L21/3205 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  G02F1/133

Abstract: In anodic oxidation, using a conversion voltage as high as 100 volts, the region of anodizable metal layer covered with a vapor-grown insulation layer is not anodized. It is believed that because the vapor-grown insulation layer is dense and has high dielectric strength and small leakage current, the layer functions as a protective mask even when a conversion voltage as high as 100 volts is impressed. A metal insulation structure as taught in this disclosure has vapor-grown insulation layers having apertures, depsoited on an anodizable metal layer, and these vapor-grown insulation layers act as protective masks against anodic oxidation, anodized layers formed by converting at least the surface areas of said metal layers can be limited to an area of metal layers locating in the apertures of the vapor-grown insulation layers. JA9-88-001