公开(公告)号：US3666548A

公开(公告)日：1972-05-30

申请号：US3666548D

申请日：1970-01-06

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L27/00 ,  G02B6/13 ,  H01L21/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/314 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L23/29 ,  H01L27/12 ,  H01L29/73 ,  H01L7/00

CPC classification number: H01L21/00 ,  H01L21/314 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76281 ,  H01L21/76297 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/114 ,  Y10S148/122 ,  Y10S438/95 ,  Y10T428/24802 ,  H01L2924/00

Abstract: A MONOCRYSTALLINE SEMICONDUCTOR BODY HAS A SINGLE, CONTINUOUS INSULATING LAYER EXTENDING FROM THE SURFACE TO A SELECTED DEPTH IN THE BODY AND SURROUNDING A REGION OF THE BODY TO DIELECTRICALLY ISOLATE THE REGION, WHICH HAS ONE SURFACE FORMED BY THE SURFACE OF THE BODY, FROM THE REMAINDER OF THE BODY. THE INSULATING LAYER IS PRODUCED BY BOMBARDING THE BODY WITH IONS, WHICH REACT WITH ATOMS IN THE BODY WHEN HEATED TO A PREDETERMINED TEMPERATURE, THE IONS ARE DIRECTED THROUGH AN OPENING IN A MASK AND A BEVELED SURFACE OF THE MASK SURROUNDING THE OPENING. THE BEVELED SURFACE CONTROLS THE PENETRATION OF THE IONS FROM THE SURFACE OF THE BODY INTO THE BODY TO THE SUB-SURFACE LAYER OF THE IONS DIRECTED THROUGH THE OPENING IN THE MASK. WHEN THE BODY IS HEATED TO THE SELECTED TEMPERATURE, THE EMBEDDED IONS REACT WITH THE ATOMS IN THE BODY TO PRODUCE THE INSULATING LAYER AND DIELECTRICALLY ISOLATE THE REGION, WHICH IS SURROUNDED BY THE SINGLE, CONTINUOUS LAYER, FROM THE REMAINDER OF THE BODY.

公开(公告)号：US3622382A

公开(公告)日：1971-11-23

申请号：US3622382D

申请日：1969-05-05

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L21/265 ,  H01L23/29 ,  B44D1/18 ,  H01L7/14

CPC classification number: H01L23/29 ,  H01L21/26533 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/085 ,  H01L2924/00

Abstract: A monocrystalline semiconductor body provided with a subsurface insulating layer. The layer is produced by bombarding the body with ions such as nitrogen, oxygen and carbon, for a time sufficient to produce a dense layer of embedded ions and at an energy level sufficient to result in ion penetration to the desired subsurface depth. The body is subsequently heated to a temperature sufficient to react the embedded ions with ions of the semiconductor body to produce an insulating layer.

公开(公告)号：CA981372A

公开(公告)日：1976-01-06

申请号：CA145126

申请日：1972-06-20

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTER H

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

Abstract: 1376526 Isolation in semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 1 Aug 1972 [6 Oct 1971] 35772/72 Heading H1K An area to form an isolated pocket in the semi-conductor body of an integrated circuit (or of a discrete device), is exposed via an apertured mask of molybdenum, tungsten, platinum, gold, silver, silicon dioxide, or silicon nitride to a beam of ions of the semiconductor itself. A discrete implanted layer is formed at some distance below the surface and has an amorphous form of very high resistivity. The body is remasked to expose only the area where sidewalls are needed and implantation is then continued at the previously used ion energy until amorphous sidewalls are formed which reach the surface. The semi-conductors quoted are silicon and germanium and the structures formed may be anealed for one hour at 550‹ or 400‹ C. respectively without alteration of the resistivity of the amorphous material.

公开(公告)号：DE1639276A1

公开(公告)日：1970-07-09

申请号：DE1639276

申请日：1968-02-02

Applicant: IBM DEUTSCHLAND

Inventor： BIEDERMANN DR EGINHART ,  BRACK KARL

IPC: H01J37/26 ,  H01J37/28

公开(公告)号：AU5112073A

公开(公告)日：1974-07-18

申请号：AU5112073

申请日：1973-01-15

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD FRANCIS ,  SCHWUTTKE GUENTER HELMUT

IPC: H01L21/762 ,  H01L7/00

公开(公告)号：DE2231891A1

公开(公告)日：1973-04-12

申请号：DE2231891

申请日：1972-06-29

Applicant: IBM DEUTSCHLAND

Inventor： BRACK KARL ,  GOREY EDWARD FRANCIS ,  SCHWUTTKE GUENTER HELMUT

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  B01J17/34

Abstract: 1376526 Isolation in semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 1 Aug 1972 [6 Oct 1971] 35772/72 Heading H1K An area to form an isolated pocket in the semi-conductor body of an integrated circuit (or of a discrete device), is exposed via an apertured mask of molybdenum, tungsten, platinum, gold, silver, silicon dioxide, or silicon nitride to a beam of ions of the semiconductor itself. A discrete implanted layer is formed at some distance below the surface and has an amorphous form of very high resistivity. The body is remasked to expose only the area where sidewalls are needed and implantation is then continued at the previously used ion energy until amorphous sidewalls are formed which reach the surface. The semi-conductors quoted are silicon and germanium and the structures formed may be anealed for one hour at 550‹ or 400‹ C. respectively without alteration of the resistivity of the amorphous material.

公开(公告)号：CA907218A

公开(公告)日：1972-08-08

申请号：CA907218D

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTHER H

IPC: H01L21/265 ,  H01L23/29