公开(公告)号：JP2003229464A

公开(公告)日：2003-08-15

申请号：JP2002330937

申请日：2002-11-14

Applicant: IBM

Inventor： KANE TERENCE L ,  WANG YUN YU ,  CAMBRA MALCOLM P JR ,  TENNEY MICHAEL P

IPC: H01L21/66 ,  H01L23/544 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device monitor structure which can detect localized defects due to floating-body effects, particularly on SOI device wafers. SOLUTION: The semiconductor device monitor structure includes a plurality of cells containing PFET or NFET device, disposed at a perimeter of the semiconductor device monitor structure which is bordered by an insulating region such as shallow trench isolation (STI). Each cell includes polysilicon gate structure having a specific spacing given by a first distance, and a portion extending beyond the perimeter a second distance. The cells are constructed in accordance with progressively varying ground rules, so that the first distance and the second distance are non-uniform between the cells. The cells may be turned to bit file map for single-cell failures, thereby enabling detection of the localized defects due to the floating-body effects. COPYRIGHT: (C)2003,JPO