公开(公告)号：JP2001345383A

公开(公告)日：2001-12-14

申请号：JP2001160548

申请日：2001-05-29

Applicant: IBM

Inventor： CLAUDEL L BARTIN ,  RAMACHANDORA DEIVAKARUNI ,  HOUGHTON RUSSELL J ,  MANDELMAN JACK A ,  TONTI WILLIAM R

IPC: H01L21/82 ,  H01L21/334 ,  H01L23/525 ,  H01L27/108 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide an anti-fuse structure which can program at a low voltage and current, uses only in an extremely small chip base, and can be formed in a gap between parts which are disposed at intervals of a least lithographic feature size. SOLUTION: An anti-fuse structure is formed on an SOI substrate in combination with a capacitor-like structure which reaches support layer or in the support layer by etching a contact which penetrates an insulator and reaches the support semiconductor layer. This anti-fuse can be programmed by selecting a position forming a conductor or damaging a dielectric of the capacitor-like structure. It is possible to restrict the damages to a desirable position by use of an insulation collar enclosing the conductor or a part of the capacitor-like structure. Thermal influences due to a programming current are isolated into the interior of a bulk silicon layer, whereby a programming during a normal operation of a device is enabled.