公开(公告)号：JP2002020891A

公开(公告)日：2002-01-23

申请号：JP2001127259

申请日：2001-04-25

Applicant: IBM

Inventor： VOLANT RICHARD P ,  PETER S LOCKE ,  PETRARCA KEVIN S ,  DAVID M ROCKWELL ,  SESHADORI SUBANA

IPC: C25D7/12 ,  C25D5/02 ,  C25D5/48 ,  H01L21/28 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide an electric plating method of a metal structure in a feature formed in a substrate. SOLUTION: A liner material 22 is adhered to an upper surface of the substrate and a bottom surface and a side wall of the feature 21. Next, a seed layer 23 is adhered onto the liner by the CVD. The seed layer is selectively removed from the upper surface of the substrate so that the seed layer is left behind only on the bottom surface of the feature. The metal is electrically plated by using this part of the seed layer so that the metal fills the feature. The upper surface is not electrically plated because the seed layer is removed from the upper surface of the substrate.

公开(公告)号：JP2004025431A

公开(公告)日：2004-01-29

申请号：JP2003065512

申请日：2003-03-11

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： VOLANT RICHARD P ,  GROVES ROBERT A ,  PETRARCA KEVIN S ,  DAVID M ROCKWELL ,  STEIN KENNETH JAY

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  B81C99/00 ,  H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B2201/018 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00214 ,  H01H2001/0068 ,  H01H2059/0054

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor torsional micro-electromechanical (MEM) switch which has a control electrode being almost perpendicular to a switching electrode, applies an electrical separation between the control signal and a switch signal, is equipped with a plurality of control parts for opening/closing switches, and whole switching area arranged in various multiple-pole, multiple-throw is remarkably reduced.
SOLUTION: The switch is equipped with a conductive movable control electrode 50 and an insulated semiconductor torsion beam 60 attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other, and a movable contact 20 attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch has the control electrodes almost perpendicular to the switching electrodes. The MEM switch has a plurality of control parts to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The manufacturing method of the torsional MEM switch is completely compatible with the CMOS manufacturing process.
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