公开(公告)号：EP1529310A4

公开(公告)日：2009-06-10

申请号：EP02797318

申请日：2002-12-13

Applicant: IBM

Inventor： FORNOF ANN R ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  MALONE KELLY ,  TYBERG CHRISTY S

IPC: H01L23/48 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides an electrical interconnect structure on a substrate, includes a first porous dielectric layer with surface region from which a porogen has been removed; and an etch stop layer disposed upon the first porous dielectric layer so that the etch stop layer extends to partially fill pores in the surface region of the first porous dielectric layer from which the porogen has been removed, thus improving adhesion during subsequent processing. Another structure comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. Methods of forming these structures are also provided.

公开(公告)号：JP2004165658A

公开(公告)日：2004-06-10

申请号：JP2003374945

申请日：2003-11-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HEDRICK JEFFREY ,  KANUKU LEE ,  TYBERG CHRISTY ,  FORNOF ANN R

IPC: H01L21/768 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a combination of an ultralow-dielectric constant dielectric and a dual damascene type Cu interconnecting structure preventing delamination at the time of CMP by enhancing adhesive properties and controlling the resistance of a Cu conductor accurately and uniformly.
SOLUTION: An electrical interconnecting structure 3 on a substrate 1 includes a first porous dielectric layer 5 having a surface region from which a pore forming agent has been removed and an etch stop layer 7 arranged on the first porous dielectric layer. The etch stop layer extends to partially fill the pores in the surface region of the first porous dielectric layer from which the pore forming agent has been removed. Thus, adhesive properties are improved during the subsequent treatment.
COPYRIGHT: (C)2004,JPO

公开(公告)号：AU2002361679A8

公开(公告)日：2003-07-09

申请号：AU2002361679

申请日：2002-12-13

Applicant: IBM

Inventor： MALONE KELLY ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  TYBERG CHRISTY S ,  FORNOF ANN R

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

公开(公告)号：AU2002361679A1

公开(公告)日：2003-07-09

申请号：AU2002361679

申请日：2002-12-13

Applicant: IBM

Inventor： FORNOF ANN R ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  MALONE KELLY ,  TYBERG CHRISTY S

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532