公开(公告)号：EP1529310A4

公开(公告)日：2009-06-10

申请号：EP02797318

申请日：2002-12-13

Applicant: IBM

Inventor： FORNOF ANN R ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  MALONE KELLY ,  TYBERG CHRISTY S

IPC: H01L23/48 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides an electrical interconnect structure on a substrate, includes a first porous dielectric layer with surface region from which a porogen has been removed; and an etch stop layer disposed upon the first porous dielectric layer so that the etch stop layer extends to partially fill pores in the surface region of the first porous dielectric layer from which the porogen has been removed, thus improving adhesion during subsequent processing. Another structure comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. Methods of forming these structures are also provided.

公开(公告)号：WO02069381A2

公开(公告)日：2002-09-06

申请号：PCT/US0204879

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76829

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90°C or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

Abstract translation: 通过（a）将含有至少一个可聚合基团的硅烷偶联剂施加到基材的表面来提供具有改善的粘合性的基本上无缺陷的低k电介质膜，以便提供所述硅烷偶联剂的基本上均匀的涂层 剂; （b）在约90℃以上的温度下加热含有硅烷偶联剂涂层的基材，以提供含有Si-O键的表面; （c）用有效去除任何残留的硅烷偶联剂的合适溶剂漂洗加热的基底; 和（d）将介电材料施加到含有Si-O键的漂洗表面上。

公开(公告)号：ES2262797T3

公开(公告)日：2006-12-01

申请号：ES02721047

申请日：2002-02-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: Un método de fabricación de un circuito integrado que comprende las etapas de: (a) aplicar un agente de copulación de silano que con- tiene al menos un grupo polimerizable a una superficie de un substrato (10) de tal manera como para proporcionar un revestimiento sustancialmente uniforme (12) de dicho agente de copulación de silano sobre dicho substrato; (b) calentar dicho substrato que contiene dicho reves- timiento de dicho agente de copulación de silano a una tem- peratura de 90ºC o superior para proporcionar una capa superficial modificada (14) a dicho substrato que contiene enlaces Si-O; (c) enjuagar dicho substrato calentado con un disol- vente adecuado que es eficaz para separar cualquier agente de copulación de silano sin reaccionar; y (d) aplicar un material dieléctrico (16) a dicha su- perficie enjuagada que contiene dichos enlaces Si-O.

公开(公告)号：AU2002361679A8

公开(公告)日：2003-07-09

申请号：AU2002361679

申请日：2002-12-13

Applicant: IBM

Inventor： MALONE KELLY ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  TYBERG CHRISTY S ,  FORNOF ANN R

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

公开(公告)号：GB2366874A

公开(公告)日：2002-03-20

申请号：GB0110320

申请日：2001-04-27

Applicant: IBM

Inventor： BUCHWALTER STEPHEN ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  LEE KANG-WOOK ,  LIEN SHUI-CHIH ALAN ,  PURUSHOTHAMAN SAMPATH

IPC: G02F1/1337 ,  G02F1/1343

Abstract: In the invention, the technology of the formation of self assembled monolayers is employed in imparting vertical alignment and domain favoring features in homeotropic pixel elements in the technology of liquid crystal type displays. Substituted silane compounds, such as octadecylsilane when applied on a transparent conductive layer surface such as that of indium tin oxide in a hydrolyzable alcohol solution, and then followed by a baking temperature cycle, form essentially single thickness molecule layers (monolayers) of molecules that are bonded at one end to the indium tin oxide surface and have the other end of the molecule operable to influence molecular orientation and domain preference of a liquid crystal.

公开(公告)号：IN1322DE2003A

公开(公告)日：2005-05-27

申请号：IN1322DE2003

申请日：2003-08-19

Applicant: IBM

Inventor： ECKERT ANDREW ROBERT ,  HAY JOHN C ,  HEDRICK JEFFREY CURTIS ,  LEE KANG-WOOK ,  LINIGER ERIC GERHARD ,  SIMONYI EVA ERIKA

IPC: H01L21/312 ,  H01L21/768

Abstract: A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.

公开(公告)号：IE20010123A1

公开(公告)日：2001-09-19

申请号：IE20010123

申请日：2001-02-09

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  PURUSHOTHAMAN SAMPATH ,  GIGNAC LYNNE M ,  GATES STEPHEN MCCONNELL ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR ,  RESTAINO DARRYL D ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/223

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：GB2365216B

公开(公告)日：2004-10-13

申请号：GB0102506

申请日：2001-02-01

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  DALTON TIMOTHY JOSEPH ,  FITZSIMMONS JOHN ANTHONY ,  GATES STEPHEN MCCONNELL ,  GIGNAC LYNNE M ,  JAMISON PAUL CHARLES ,  LEE KANG-WOOK ,  PURUSHOTHAMAN SAMPATH ,  RESTAINO DARRYL D ,  SIMONYI EVA ,  WILDMAN HORATIO SEYMOUR

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/314

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：GB2366874B

公开(公告)日：2004-04-28

申请号：GB0110320

申请日：2001-04-27

Applicant: IBM

Inventor： BUCHWALTER STEPHEN ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  LEE KANG-WOOK ,  LIEN SHUI-CHIH ALAN ,  PURUSHOTHAMAN SAMPATH

IPC: G02F1/1337 ,  G02F1/1343

Abstract: In the invention, the technology of the formation of self assembled monolayers is employed in imparting vertical alignment and domain favoring features in homeotropic pixel elements in the technology of liquid crystal type displays. Substituted silane compounds, such as octadecylsilane when applied on a transparent conductive layer surface such as that of indium tin oxide in a hydrolyzable alcohol solution, and then followed by a baking temperature cycle, form essentially single thickness molecule layers (monolayers) of molecules that are bonded at one end to the indium tin oxide surface and have the other end of the molecule operable to influence molecular orientation and domain preference of a liquid crystal.

公开(公告)号：AU2002361679A1

公开(公告)日：2003-07-09

申请号：AU2002361679

申请日：2002-12-13

Applicant: IBM

Inventor： FORNOF ANN R ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  MALONE KELLY ,  TYBERG CHRISTY S

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532