公开(公告)号：US3615951A

公开(公告)日：1971-10-26

申请号：US3615951D

申请日：1969-06-20

Applicant: IBM

Inventor： FRANCO JACK R ,  TOTTA PAUL A ,  WHITE JAMES F

IPC: C23F1/02 ,  H01L21/00 ,  H01L23/522 ,  H05K3/06

CPC classification number: H05K3/067 ,  C23F1/02 ,  H01L21/00 ,  H01L23/522 ,  H01L2924/0002 ,  H05K2203/0315 ,  H05K2203/0369 ,  H05K2203/1142 ,  H05K2203/1157 ,  H01L2924/00

Abstract: A method for subtractive etching copper adapted to form very fine line patterns. In the method a mask is deposited on the copper surface, the copper surface exposed to an environment containing an oxidizing agent which causes the formation of an adherent self thickness limiting coating of a copper compound on the exposed surface, the resultant adherent coating removed in a second environment, and the steps of forming the coating and removing repeated until the desired amount of copper has been removed.

公开(公告)号：US3873361A

公开(公告)日：1975-03-25

申请号：US42003473

申请日：1973-11-29

Applicant: IBM

Inventor： FRANCO JACK R ,  HAVAS JANOS ,  LEVINE HAROLD A

IPC: G03F1/00 ,  C23C14/04 ,  G03F1/08 ,  G03F7/09 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/312 ,  H01L23/29 ,  H05K3/02 ,  H05K3/04 ,  B44D1/18 ,  H05K1/00

CPC classification number: H05K3/048 ,  C23C14/042 ,  G03F7/094 ,  H01L21/00 ,  H01L21/312 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing a non-photosensitive organic polymeric material on a substrate, and forming on said polymeric layer a masking layer of an inorganic material, preferably metal, having openings in a selected pattern. Then, forming, by reactive sputter etching, utilizing the metallic mask as a barrier, openings through the polymeric layer extending to the substrate, the openings in the polymeric layer being aligned with and laterally wider than the corresponding openings in the metallic masking layer. The thin film to be deposited is then applied over the structure; it is, thereby, deposited on the substrate in said openings. Then, the remaining polymeric layer is removed, lifting off the masking layer and the thin film above the polymeric layer to leave thin film deposited in a selected pattern in the openings.

Abstract translation: 一种用于在制造集成电路中沉积薄膜的方法，其避免了膜的边缘撕裂。 该方法包括将非感光有机聚合物材料沉积在基底上，并在所述聚合物层上形成具有选定图案开口的无机材料（优选金属）的掩蔽层。 然后，通过反应性溅射蚀刻，利用金属掩模作为屏障，通过聚合物层的开口延伸到基底，聚合物层中的开口与金属掩蔽层中相应的开口对准并且横向宽于金属掩模层中的相应开口。 然后将待沉积的薄膜施加在结构上; 从而沉积在所述开口中的基板上。 然后，除去剩余的聚合物层，从掩模层和聚合物层上方的薄膜上取下薄膜，以在开口中以选定的图案沉积薄膜。

公开(公告)号：CA1032396A

公开(公告)日：1978-06-06

申请号：CA211474

申请日：1974-10-16

Applicant: IBM

Inventor： FRANCO JACK R ,  HAVAS JANOS ,  LEVINE HAROLD A

IPC: G03F1/00 ,  C23C14/04 ,  G03F1/08 ,  G03F7/09 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/312 ,  H01L23/29 ,  H05K3/02 ,  H05K3/04 ,  H01L

Abstract: A method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing a non-photosensitive organic polymeric material on a substrate, and forming on said polymeric layer a masking layer of an inorganic material, preferably metal, having openings in a selected pattern. Then, forming, by reactive sputter etching, utilizing the metallic mask as a barrier, openings through the polymeric layer extending to the substrate, the openings in the polymeric layer being aligned with and laterally wider than the corresponding openings in the metallic masking layer. The thin film to be deposited is then applied over the structure; it is, thereby, deposited on the substrate in said openings. Then, the remaining polymeric layer is removed, lifting off the masking layer and the thin film above the polymeric layer to leave thin film deposited in a selected pattern in the openings.

公开(公告)号：FR2310633A1

公开(公告)日：1976-12-03

申请号：FR7608563

申请日：1976-03-12

Applicant: IBM

Inventor： FRANCO JACK R ,  HAVAS JANOS ,  ROMPALA LEWIS J

IPC: H01L21/302 ,  C23C14/04 ,  C23F4/00 ,  G03F7/09 ,  G03F7/095 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3205 ,  H05K3/02 ,  H05K3/04 ,  H01L21/72

Abstract: A lift-off method for use in depositing thin films in the fabrication of integrated circuits which avoids edge tearing of the films. The method involves depositing an organic polymeric first masking material on a substrate, and forming on said material a layer of a polydimethylsiloxane resin material. The material, in turn, is covered by a second masking layer, preferably an organic polymeric resist material into which openings are placed in a selected pattern utilizing lithographic techniques. Then, conforming openings are placed in the underlying polydimethylsiloxane resin material and the openings are extended through the underlying resist material by successive reactive sputter etching steps to expose the substrate surface in the aforesaid selected pattern. The thin film to be deposited is then applied over the resulting structure; it is, thereby, deposited on the substrate in said openings. The final reactive sputter etching step affords edges in the openings through the resin material layer which overhang the edges in the openings through the first masking layer affording easy lift-off of the unwanted areas of the deposited film when the first masking layer is totally removed by application of solvent.

公开(公告)号：CA890894A

公开(公告)日：1972-01-18

申请号：CA890894D

Applicant: IBM

Inventor： FRANCO JACK R ,  TOTTA PAUL A ,  WHITE JAMES F

IPC: C23F1/02 ,  H01L21/00 ,  H01L23/522 ,  H05K3/06