公开(公告)号：JP2004146824A

公开(公告)日：2004-05-20

申请号：JP2003347653

申请日：2003-10-06

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FUNG KA HING ,  GILBERT PERCY V

IPC: H01L29/41 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L21/823864 ,  Y10S257/90

Abstract: PROBLEM TO BE SOLVED: To optimize the performance of at least two different field effect transistors that share the same semiconductor substrate.
SOLUTION: At least two field effect transistors 100, 110 are formed on the same substrate 10. The first field effect transistor is provided with a spacer 120 with the first width, and the second field effect transistor is provided with a spacer 130 with the second width, where the first width is different from the second width. By doing this, the spacer width and the transistor performance of the two field effect transistors on the same substrate can be optimized.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002261278A

公开(公告)日：2002-09-13

申请号：JP2002004187

申请日：2002-01-11

Applicant: IBM

Inventor： AJMERA ATUL C ,  FUNG KA HING ,  KU VICTOR ,  SCHEPIS DOMINIC J

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a structure and a method for reducing overlapping capaci tance between a gate and source/drain in a MOSFET element. SOLUTION: A notched gate MOS element includes an encapsulated low- permittivity material or capsuled air or vacuum on the bottom of the notched gate. Capacitance loss is reduced greatly on the part due to low permittivity on an interface between the gate and the source/drain.