公开(公告)号：CA1137395A

公开(公告)日：1982-12-14

申请号：CA352847

申请日：1980-05-27

Applicant: IBM

Inventor： GHEZ RICHARD A ,  GUNN JOHN B ,  HAMMER ROBERT ,  VAN VECHTEN JAMES A

IPC: C23F1/00 ,  C23F1/04 ,  C23F1/02 ,  H01L21/306

Abstract: ETCHING OF MULTIPLE HOLES OF UNIFORM SIZE Uniform holes with a diameter of the order of 1 micrometer or larger can be formed by an etching operation which employs the combined properties of the surface tension of the etch coupled with a force on the meniscus of the etch in the hole to cause the etching to stop when one hole reaches the proper size and to permit the etching to continue on all other holes until they reach the same size. YO977-061

公开(公告)号：FR2289235A1

公开(公告)日：1976-05-28

申请号：FR7521482

申请日：1975-07-03

Applicant: IBM

Inventor： GHEZ RICHARD A ,  GIESS EDWARD A ,  PLASKETT THOMAS S

IPC: C30B19/02 ,  C30B19/06 ,  C30B29/28 ,  H01F41/28 ,  H01L21/208 ,  B01J17/00

公开(公告)号：CA1055818A

公开(公告)日：1979-06-05

申请号：CA236448

申请日：1975-09-18

Applicant: IBM

Inventor： GHEZ RICHARD A ,  GIESS EDWARD A ,  PLASKETT THOMAS S

IPC: C30B19/02 ,  C30B19/06 ,  C30B29/28 ,  H01F41/28 ,  H01L21/208 ,  B01J17/06

Abstract: ISOTHERMAL GROWTH OF BUBBLE DOMAIN GARNET FILMS A technique for reproducibly and uniformly growing magnetic bubble domain garnet films under isothermal conditions. In one situation, a fluxed melt is prepared such that the primary phase (first phase to crystallize) is orthoferrite rather than garnet. At the growth temperature and prior to substrate-melt contact, the melt is saturated with respect to orthoferrite and supersaturated with respect to garnet. During growth, the orthoferrite crystals are separated from the supersaturated garnet solution so that a high quality garnet film is grown on the substrate. After growth, the melt is reheated to above its liquidus (crystallization) temperature to dissolve the orthoferrite crystals, thus providing a nutrient source for garnet constituents which can be used during subsequent expitaxial depositions.