公开(公告)号：CA1095154A

公开(公告)日：1981-02-03

申请号：CA282747

申请日：1977-07-14

Applicant: IBM

Inventor： VAN VECHTEN JAMES A ,  WOODALL JERRY M

IPC: H01L21/205 ,  H01L21/22 ,  H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01S5/323 ,  H01L21/30 ,  H01L29/36 ,  H01S3/19

Abstract: Self-completing semiconductor materials may be converted to p-conductivity by charged particle irradiation which rearranges the atoms in the crystal lattice and may then be used in a heterostructure semiconductor device to permit the including in the device of materials with a wide range of new properties.

公开(公告)号：CA1137395A

公开(公告)日：1982-12-14

申请号：CA352847

申请日：1980-05-27

Applicant: IBM

Inventor： GHEZ RICHARD A ,  GUNN JOHN B ,  HAMMER ROBERT ,  VAN VECHTEN JAMES A

IPC: C23F1/00 ,  C23F1/04 ,  C23F1/02 ,  H01L21/306

Abstract: ETCHING OF MULTIPLE HOLES OF UNIFORM SIZE Uniform holes with a diameter of the order of 1 micrometer or larger can be formed by an etching operation which employs the combined properties of the surface tension of the etch coupled with a force on the meniscus of the etch in the hole to cause the etching to stop when one hole reaches the proper size and to permit the etching to continue on all other holes until they reach the same size. YO977-061

公开(公告)号：CA1100192A

公开(公告)日：1981-04-28

申请号：CA292048

申请日：1977-11-30

Applicant: IBM

Inventor： VAN VECHTEN JAMES A

IPC: F25D11/00 ,  F25B21/00 ,  F25D31/00 ,  G12B15/00 ,  G21K1/16 ,  H01L41/00 ,  F25B21/02

Abstract: DIELECTRIC REFRIGERATOR USING ORIENTABLE DEFECT DIPOLES This disclosure describes a dielectric refrigerator using orientable defect dipoles and operating between a high temperature, Th reservoir illustratively supplied by a Stirling cycle refrigerator (8.degree.K ? Th ? 20.degree.K) and a low temperature, T1, load, illustratively the liquid He cooling fluid for Josephson junction or other superconducting devices (2.degree.K ? T1 ? 6.degree.X). Exemplary practice of this invention provides cooling from the limit of a refrigerator based on the Stirling thermodynamic cycle (20 to 8.degree.K) to operating temperatures of common and useful superconductive devices (3 to 6.degree.K). Orientable electric dipoles of defects in electrically insulating materials, e.g., crystals, are utilized to provide cooling in the range from (8-20.degree.K) to (2-6.degree.K). The following are particular considerations concerning the practice of this invention: use of LiF, MgO and BeO as host crystals; use of OH and/or NH2 as defects in LiF, and use of HF, HC1, HBr and/or NH as defects in MgO or BeO; mechanical or electromechanical means to make and break thermal contact between dielectric crystal and load and between load and reservoir; and use of thermal rectifiers to obviate the need for YO976-038 thermal switches in order to transfer heat from the load to the refrigerator material and thence to the reservoir.

公开(公告)号：CA1114148A

公开(公告)日：1981-12-15

申请号：CA292575

申请日：1977-12-07

Applicant: IBM

Inventor： CUOMO JEROME J ,  GAMBINO RICHARD J ,  VAN VECHTEN JAMES A

IPC: G21F9/02 ,  G21G4/00 ,  G21H1/00 ,  G21H5/00 ,  C09K11/04

Abstract: RADIOACTIVE GAS ENCAPSULATED IN AMORPHOUS MATERIAL Amorphous materials containing radioactive gas in the voids thereof are useful in such applications as in the control of radioactive gases and in fabricating controlled radioactive sources. The radioactive gas encapsulating material is formed under electrical stress that entraps approximately 30 atomic percent of the radioactive gas in the voids in the material.

公开(公告)号：CA1077812A

公开(公告)日：1980-05-20

申请号：CA282753

申请日：1977-07-14

Applicant: IBM

Inventor： VAN VECHTEN JAMES A ,  WOODALL JERRY M

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L33/00 ,  H01S5/323 ,  B01J17/34

Abstract: P-type self-compensated semiconductor materials and a process for producing them are described. The process includes imparting a region of P-type conductivity to the body of a self-compensated compound semiconductor material by the steps of preparing a crystal body of normally N-type self-compensated compound semiconductor material and bombarding said crystal body with charged particles such as beryllium ions.