公开(公告)号：US3642443A

公开(公告)日：1972-02-15

申请号：US3642443D

申请日：1968-08-19

Applicant: IBM

Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  PLASKETT THOMAS S

IPC: C30B13/02 ,  C30B13/34 ,  C01B25/08 ,  B01D9/00 ,  B01J17/02

CPC classification number: C30B13/02 ,  C30B13/34 ,  Y10S117/902 ,  Y10S148/107 ,  Y10S148/115 ,  Y10S148/119

Abstract: The disclosure presents a method of growing large crystals of GaP from solution in which a zone of liquid gallium saturated with GaP is passed upward through a GaP feed ingot. In order to grow large crystals, it was found necessary to initiate growth onto a twinned seed crystal in which all of the twin planes are parallel to each other and parallel to a growth direction. Wafers cut parallel to the twin planes exhibit a (111) surface which are suitable for electroluminescent devices.

Abstract translation: 本公开提出了一种从GaP的饱和的液态镓区向上通过GaP进料锭的溶液中生长GaP的大晶体的方法。 为了生长大晶体，发现有必要在其中所有双平面彼此平行并且平行于生长方向的双晶晶中引发生长。 平行于双平面切割的晶片表现出适合于电致发光器件的（111）表面。

公开(公告)号：US3591340A

公开(公告)日：1971-07-06

申请号：US3591340D

申请日：1968-07-11

Applicant: IBM

Inventor： PLASKETT THOMAS S

IPC: C30B11/12 ,  C01B27/00 ,  C01B31/36 ,  C01G9/08

CPC classification number: C30B11/12

Abstract: GROUPS III-A-V-A AND II-B-VI-A COMPOUNDS AND ALLOYS THEREOF ARE PREPARED, FOR EXAMPLE, BY FLOWING A GASEOUS GROUP V COMPOUND INTO A BATH OF A MOLTEN GROUP III-A ELEMENT HAVING A TEMPERATRUE PROFILE ESTABLISHED THEREABOUT. A CONTAINER CONTAINING A MOLTEN METAL OR A MIXTURE OF SAID METALS IS PLACED IN A VERTICAL FURNACE, ABOUT WHICH A STEEP TEMPERATURE GRADIENT IS ESTABLISHED ALONG ITS LENGTH. A GASEOUS COMPOUND OF A GROUP V-A ELEMENT OR A MIXTURE OF GASEOUS GROUP V-A COMPOUNDS AND AN INERT GAS IS PERMITTED TO FLOW INTO THE MOLTEN GROUP III-A METAL. A TEMPERATURE GRADIENT ALONG THE LENGTH OF THE CRUCIBLE CAUSES THE GROUP V-A ELEMENT TO REACT WITH THE MOLTEN GROUP III-A METAL AND THE REACTION PRODUCT THEREFROM DISSOLVES IN THE MOLTEN METAL. THE

LOWER SURFACE OF THE CRUCILBE IS COOLED BY A COOL AIR BLAST WHICH ESTABLISHES CONVECTION CURRENTS WITHIN THE MOLTEN METAL SO THAT AS THE SOLUBILIZED GROUP III-A-V-A COMPOUND MOVES DOWNWARDLY IN THE CRUCIBLE IT MIXES WITH THE MOLTEN GROUP III-A COMPOUND, IS COOLED AND CRYSTALLIZES OUT OF THE MOLTEN METAL AS A HIGHLY PURE CRYSTALLINE INGOT OF THE SPECIFIC III-A-V-A COMPOSITION. IT HAS ALSO BEEN FOUND THAT PURE SILICON CARBIDE CAN BE PREPARED IN A SIMILAR, MANNER. FOR EXAMPLE, A MIXTURE OF METHANE AND AND INERT GAS IS PERMITTED TO FLOW INTOMOLTEN SILICON WHICH IS SIMILARLY SUBJECTED TO A TEMPERATURE GRADIENT. THE MATERIALS FORMED BY THE PROCESS OF THIS INVENTION ARE FOUND TO BE OF VERY HIGH PURITY.

公开(公告)号：US3520810A

公开(公告)日：1970-07-21

申请号：US3520810D

申请日：1968-01-15

Applicant: IBM

Inventor： PLASKETT THOMAS S ,  WOODALL JERRY M ,  WUESTENHOEFER WILLIAM C

IPC: C30B11/14 ,  B01J17/00 ,  B01J17/20 ,  H01C3/00

CPC classification number: C30B11/14 ,  Y10S117/902 ,  Y10S148/022 ,  Y10S148/107 ,  Y10S148/115

公开(公告)号：CA1035036A

公开(公告)日：1978-07-18

申请号：CA212326

申请日：1974-10-25

Applicant: IBM

Inventor： KLOKHOLM ERIK ,  PLASKETT THOMAS S

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/24

Abstract: Bubble domain devices using conventionally known elements for providing a plurality of bubble domain functions, including writing, storage and reading, are provided using a magnetic medium of garnet structure characterized by the presence of a single rare earth ion present in all available dodecahedral lattice sites. These devices operate well over room temperature ranges. This material has sufficiently high anisotropy (of the order 105 ergs/cm3) to support stable magnetic bubble domains in the material. The anisotropy is growth induced and cannot be explained by conventionally accepted theories of anisotropy in garnet bubble domain materials. In preferred embodiments, these rare earth iron garnet films are deposited on suitable substances, which can be any non-magnetic materials having suitable lattice constants to provide substantial lattice match with the magnetic garnet films. Examples are Eu3Fe5O12 on Nd3Ga5O12 or (Pr,Sm)3Ga5O12 substrates; and Sm3Fe5O12 on (Pr,Nd)3Ga5O12 substrates.

公开(公告)号：FR2289235A1

公开(公告)日：1976-05-28

申请号：FR7521482

申请日：1975-07-03

Applicant: IBM

Inventor： GHEZ RICHARD A ,  GIESS EDWARD A ,  PLASKETT THOMAS S

IPC: C30B19/02 ,  C30B19/06 ,  C30B29/28 ,  H01F41/28 ,  H01L21/208 ,  B01J17/00

公开(公告)号：CA945357A

公开(公告)日：1974-04-16

申请号：CA148608

申请日：1972-08-03

Applicant: IBM

Inventor： CALHOUN BERTRAM A ,  GIESS EDWARD A ,  KLOKHOLM ERIK ,  PLASKETT THOMAS S ,  ROSIER LAURENCE L ,  SEIDEN PHILIP E

IPC: H01F10/26 ,  C09D5/23 ,  H01F10/24

公开(公告)号：CA1055818A

公开(公告)日：1979-06-05

申请号：CA236448

申请日：1975-09-18

Applicant: IBM

Inventor： GHEZ RICHARD A ,  GIESS EDWARD A ,  PLASKETT THOMAS S

IPC: C30B19/02 ,  C30B19/06 ,  C30B29/28 ,  H01F41/28 ,  H01L21/208 ,  B01J17/06

Abstract: ISOTHERMAL GROWTH OF BUBBLE DOMAIN GARNET FILMS A technique for reproducibly and uniformly growing magnetic bubble domain garnet films under isothermal conditions. In one situation, a fluxed melt is prepared such that the primary phase (first phase to crystallize) is orthoferrite rather than garnet. At the growth temperature and prior to substrate-melt contact, the melt is saturated with respect to orthoferrite and supersaturated with respect to garnet. During growth, the orthoferrite crystals are separated from the supersaturated garnet solution so that a high quality garnet film is grown on the substrate. After growth, the melt is reheated to above its liquidus (crystallization) temperature to dissolve the orthoferrite crystals, thus providing a nutrient source for garnet constituents which can be used during subsequent expitaxial depositions.

公开(公告)号：DE2453251A1

公开(公告)日：1975-05-15

申请号：DE2453251

申请日：1974-11-09

Applicant: IBM

Inventor： KLOKHOLM ERIK ,  PLASKETT THOMAS S

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/24 ,  H01F10/02

Abstract: Bubble domain devices using conventionally known elements for providing a plurality of bubble domain functions, including writing, storage and reading, are provided using a magnetic medium of garnet structure characterized by the presence of a single rare earth ion present in all available dodecahedral lattice sites. These devices operate well over room temperature ranges. This material has sufficiently high anisotropy (of the order 105 ergs/cm3) to support stable magnetic bubble domains in the material. The anisotropy is growth induced and cannot be explained by conventionally accepted theories of anisotropy in garnet bubble domain materials. In preferred embodiments, these rare earth iron garnet films are deposited on suitable substances, which can be any non-magnetic materials having suitable lattice constants to provide substantial lattice match with the magnetic garnet films. Examples are Eu3Fe5O12 on Nd3Ga5O12 or (Pr,Sm)3Ga5O12 substrates; and Sm3Fe5O12 on (Pr,Nd)3Ga5O12 substrates.