公开(公告)号：EP1671362A4

公开(公告)日：2010-04-28

申请号：EP04789451

申请日：2004-09-30

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS D ,  GREER HEIDI L ,  RASSEL ROBERT M

IPC: H01L21/02 ,  H01L20060101 ,  H01L21/302 ,  H01L21/461 ,  H01L27/07 ,  H01L27/08

CPC classification number: H01L27/0738 ,  H01L27/0802 ,  H01L28/20

公开(公告)号：WO2005034202A3

公开(公告)日：2005-11-10

申请号：PCT/US2004032406

申请日：2004-09-30

Applicant: IBM ,  COOLBAUGH DOUGLAS D ,  GREER HEIDI L ,  RASSEL ROBERT M

Inventor： COOLBAUGH DOUGLAS D ,  GREER HEIDI L ,  RASSEL ROBERT M

IPC: H01L20060101 ,  H01L21/02 ,  H01L21/302 ,  H01L21/461 ,  H01L27/08

CPC classification number: H01L27/0738 ,  H01L27/0802 ,  H01L28/20

Abstract: A process is disclosed for fabricating precision polysilicon resistors which more precisely control the tolerance of the sheet resistivity of the produced polysilicon resistors. The process generally includes performing an emitter / FET activation rapid thermal anneal (RTA) on a wafer having partially formed polysilicon resistors, followed by steps of depositing a protective dielectric layer (62) on the polysilicon, (56) implanting a dopant (64) through the protective dielectric layer into the polysilicon (56) to define the resistance of the polysilicon resistors, and forming a silicide (66).

Abstract translation: 公开了一种制造精密多晶硅电阻器的方法，其更精确地控制所产生的多晶硅电阻器的薄层电阻率的公差。 该方法通常包括在具有部分形成的多晶硅电阻器的晶片上执行发射极/ FET激活快速热退火（RTA），随后在多晶硅上沉积保护性介电层（62）的步骤，（56）注入掺杂剂（64） 通过保护介电层进入多晶硅（56）以限定多晶硅电阻器的电阻，并形成硅化物（66）。