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公开(公告)号：BR9405159A
公开(公告)日：1995-08-01
申请号：BR9405159
申请日：1994-12-20
Applicant: IBM
Inventor： COFFEY KEVIN R , FONTANA ROBERT E , HOWARD JAMES K , HYLTON TODD L , PARKER MICHAEL A , TSANG CHING H
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：CA2134711A1
公开(公告)日：1995-06-24
申请号：CA2134711
申请日：1994-10-31
Applicant: IBM
Inventor： COFFEY KEVIN R , FONTANA ROBERT E , HOWARD JAMES K , HYLTON TODD L , PARKER MICHAEL A , TSANG CHING H
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistivesensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers offerromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：PH30835A
公开(公告)日：1997-11-03
申请号：PH49556
申请日：1994-12-14
Applicant: IBM
Inventor： COFFEY KEVIN R , HYLTON TODD L , FONTANA ROBERT E , HOWARD JAMES K , PARKER MICHAEL A , TSONG CHING H
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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