MAGNETORESISTIVE READ TRANSDUCER
    1.
    发明专利

    公开(公告)号:CA1253962A

    公开(公告)日:1989-05-09

    申请号:CA511406

    申请日:1986-06-12

    Applicant: IBM

    Inventor: TSANG CHING H

    Abstract: MAGNETORESISTIVE READ TRANSDUCER A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level sufficient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements are connected to the MR layer within the central region to define a detection region so that signal output means connected to the conductive elements can determine the resistance changes in the detection region of the MR layer as a function of the fields which are intercepted by the MR layer. This invention relates in general to magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved magnetoresistive read transducer.

    2.
    发明专利
    未知

    公开(公告)号:DE69528349D1

    公开(公告)日:2002-10-31

    申请号:DE69528349

    申请日:1995-12-12

    Applicant: IBM

    Abstract: A combined sunken magnetoresistive (MR) read/write head (30B) is provided wherein at least one (S1) of the first and second shield layers (S1,S2) are eliminated or thinned down in an insulation stack region just behind a pole tip region. This provides a depression behind the pole tip region where head components, such as the write coil, insulation stack and pole pieces of a write head, are located. In preferred embodiments, leads for an MR sensor of the head extend parallel to an air bearing surface (ABS) where they connect to first and second conductors beyond the limits of the shield layers. The conductors extend back into the head normal to the air bearing surface without any danger of shorting to the shield layers.

    MULTILAYER MAGNETORESISTIVE SENSOR

    公开(公告)号:CA2134711A1

    公开(公告)日:1995-06-24

    申请号:CA2134711

    申请日:1994-10-31

    Applicant: IBM

    Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistivesensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers offerromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

    4.
    发明专利
    未知

    公开(公告)号:DE69528349T2

    公开(公告)日:2003-05-15

    申请号:DE69528349

    申请日:1995-12-12

    Applicant: IBM

    Abstract: A combined sunken magnetoresistive (MR) read/write head (30B) is provided wherein at least one (S1) of the first and second shield layers (S1,S2) are eliminated or thinned down in an insulation stack region just behind a pole tip region. This provides a depression behind the pole tip region where head components, such as the write coil, insulation stack and pole pieces of a write head, are located. In preferred embodiments, leads for an MR sensor of the head extend parallel to an air bearing surface (ABS) where they connect to first and second conductors beyond the limits of the shield layers. The conductors extend back into the head normal to the air bearing surface without any danger of shorting to the shield layers.

    5.
    发明专利
    未知

    公开(公告)号:BR9405159A

    公开(公告)日:1995-08-01

    申请号:BR9405159

    申请日:1994-12-20

    Applicant: IBM

    Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

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