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公开(公告)号:CA1253962A
公开(公告)日:1989-05-09
申请号:CA511406
申请日:1986-06-12
Applicant: IBM
Inventor: TSANG CHING H
IPC: G11B5/39
Abstract: MAGNETORESISTIVE READ TRANSDUCER A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level sufficient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements are connected to the MR layer within the central region to define a detection region so that signal output means connected to the conductive elements can determine the resistance changes in the detection region of the MR layer as a function of the fields which are intercepted by the MR layer. This invention relates in general to magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved magnetoresistive read transducer.
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公开(公告)号:DE69528349D1
公开(公告)日:2002-10-31
申请号:DE69528349
申请日:1995-12-12
Applicant: IBM
Inventor: HU HUNG-LIANG , LEE RODNEY E , SANTINI HUGO A E , TSANG CHING H
Abstract: A combined sunken magnetoresistive (MR) read/write head (30B) is provided wherein at least one (S1) of the first and second shield layers (S1,S2) are eliminated or thinned down in an insulation stack region just behind a pole tip region. This provides a depression behind the pole tip region where head components, such as the write coil, insulation stack and pole pieces of a write head, are located. In preferred embodiments, leads for an MR sensor of the head extend parallel to an air bearing surface (ABS) where they connect to first and second conductors beyond the limits of the shield layers. The conductors extend back into the head normal to the air bearing surface without any danger of shorting to the shield layers.
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公开(公告)号:CA2134711A1
公开(公告)日:1995-06-24
申请号:CA2134711
申请日:1994-10-31
Applicant: IBM
Inventor: COFFEY KEVIN R , FONTANA ROBERT E , HOWARD JAMES K , HYLTON TODD L , PARKER MICHAEL A , TSANG CHING H
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistivesensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers offerromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号:DE69528349T2
公开(公告)日:2003-05-15
申请号:DE69528349
申请日:1995-12-12
Applicant: IBM
Inventor: HU HUNG-LIANG , LEE RODNEY E , SANTINI HUGO A E , TSANG CHING H
Abstract: A combined sunken magnetoresistive (MR) read/write head (30B) is provided wherein at least one (S1) of the first and second shield layers (S1,S2) are eliminated or thinned down in an insulation stack region just behind a pole tip region. This provides a depression behind the pole tip region where head components, such as the write coil, insulation stack and pole pieces of a write head, are located. In preferred embodiments, leads for an MR sensor of the head extend parallel to an air bearing surface (ABS) where they connect to first and second conductors beyond the limits of the shield layers. The conductors extend back into the head normal to the air bearing surface without any danger of shorting to the shield layers.
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公开(公告)号:BR9405159A
公开(公告)日:1995-08-01
申请号:BR9405159
申请日:1994-12-20
Applicant: IBM
Inventor: COFFEY KEVIN R , FONTANA ROBERT E , HOWARD JAMES K , HYLTON TODD L , PARKER MICHAEL A , TSANG CHING H
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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