公开(公告)号：JP2002324905A

公开(公告)日：2002-11-08

申请号：JP2002067509

申请日：2002-03-12

Applicant: IBM

Inventor： IYER SUNDAR K ,  SADANA DEVENDRA K

IPC: H01L21/265 ,  H01L21/336 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a transistor body contact in an SOI device. SOLUTION: An SOI substrate contact is provided on the bodies of transistors fabricated in an SOI silicon wafer by selectively making an insulating layer below the bodies leaky. This is achieved by implanting, below a set of transistor body locations, a predetermined dose of ions having an energy such that the implanted region extends vertically through a buried insulator between the body and the wafer substrate. Thereafter, a sufficient voltage is applied to break down an oxide, and a conductive path is made between the body and the substrate.

公开(公告)号：WO0199148A3

公开(公告)日：2002-08-29

申请号：PCT/US0119240

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： IYER SUNDAR K ,  BRINTZINGER AXEL ,  SMEYS PETER ,  NARAYAN CHANDRASEKHAR ,  IYER SUBRAMANIAN

IPC: H01L23/525 ,  H01L27/102

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fuse for semiconductor devices, in accordance with the present invention, includes a cathode (104) including a first dopant type, and an anode (102) including a second dopant type where the second dopant type is opposite the first dopant type. A fuse link (106) connects the cathode and the anode and includes the second dopant type. The fuse link and the cathode form a junction (111) therebetween, and the junction is configured to be reverse biased relative to a cathode potential and an anode potential. A conductive layer (103) is formed across the junction such that current flowing at the junction is diverted into the conductive layer to enhance material migration to program the fuse.

Abstract translation: 根据本发明的用于半导体器件的熔断器包括包括第一掺杂剂型的阴极（104）和包括第二掺杂剂类型的阳极（102），其中第二掺杂剂类型与第一掺杂剂类型相反。 熔丝连接（106）连接阴极和阳极并且包括第二掺杂剂类型。 熔丝链和阴极在其间形成结（111），并且该结被配置为相对于阴极电位和阳极电位被反向偏置。 在结上形成导电层（103），使得在结处流动的电流被转移到导电层中以增强材料迁移以对熔丝进行编程。

公开(公告)号：WO0247144A3

公开(公告)日：2003-02-13

申请号：PCT/US0145195

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： CHEN BOMY A ,  HIRSCH ALEXANDER ,  IYER SUNDAR K ,  ROVEDO NIVO ,  WANN HSING-JEN ,  ZHANG YING

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/0653 ,  H01L21/7621 ,  H01L21/76224 ,  H01L21/7624 ,  H01L21/823418 ,  H01L21/823481

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

Abstract translation: 在源极和漏极之下形成图案化的掩埋绝缘体，通过在身体区域上形成掩模并在要形成源极和漏极的区域中注入一定量的n或p型离子，然后蚀刻STI并蚀刻出植入 区。 光氧化之后是STI中的共形氧化物沉积以及蚀刻区域，从而仅在需要时形成掩埋氧化物。