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公开(公告)号：EP1018160A4
公开(公告)日：2005-03-30
申请号：EP99939802
申请日：1999-01-29
Applicant: IBM , PERRAUD LAURENT CLAUDE
Inventor： GRILL ALFRED , JAHNES CHRISTOPHER VINCENT , PATEL VISHNUBHAI VITTHALBHAI , PERRAUD LAURENT CLAUDE
IPC: C23C16/32 , H01L21/312 , H01L21/316 , H01L23/29 , H01L23/522 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC classification number: H01L21/76832 , C23C16/325 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L23/291 , H01L23/296 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/30 , H01L2924/00
Abstract: A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film (38, 44) which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film (38, 44), specific precursor materials having a ring structure are preferred.
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公开(公告)号：WO2011160985A3
公开(公告)日：2012-03-01
申请号：PCT/EP2011059880
申请日：2011-06-15
Applicant: IBM , IBM UK , STAMPER ANTHONY , JAHNES CHRISTOPHER VINCENT
Inventor： STAMPER ANTHONY , JAHNES CHRISTOPHER VINCENT
IPC: B81B3/00
CPC classification number: B81C1/00365 , B81B3/0021 , B81B3/0072 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。
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公开(公告)号：WO0207203A3
公开(公告)日：2002-05-30
申请号：PCT/US0120184
申请日：2001-06-25
Applicant: INFINEON TECHNOLOGIES CORP , IBM
Inventor： COWLEY ANDY , EMMI PETER , TIMOTHY DALTON , JAHNES CHRISTOPHER VINCENT
IPC: H01L21/311 , H01L21/768 , H01L21/3213
CPC classification number: H01L21/02063 , H01L21/31138 , H01L21/76804 , H01L21/76807 , Y10S134/902 , Y10S438/906
Abstract: A method for removal of post reactive ion etch by-product from a semiconductor wafer surface or microelectronic composite structure comprising:supplying a reducing gas plasma incorporating a forming gas mixture selected from the group consisting of a mixture of N2/H2 or a mixture of NH3/H2 into a vacuum chamber in which a semiconductor wafer surface or a microelectronic composite structure is supported to form a post-RIE polymer material by-product on the composite structure without significant removal of an organic, low K material which has also been exposed to the reducing gas plasma; and removing the post-RIE polymer material by-product with a wet clean.
Abstract translation: 一种用于从半导体晶片表面或微电子复合结构去除后反应离子蚀刻副产物的方法，包括：提供还原气体等离子体，该还原气体等离子体包含选自N2 / H2或NH3混合物的成形气体混合物 / H2进入真空室，其中半导体晶片表面或微电子复合结构被支撑以在复合结构上形成后RIE聚合物材料副产物，而不显着除去已经暴露于 还原气体等离子体; 并用湿清洁除去后RIE聚合物材料副产物。
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公开(公告)号：GB2498264A
公开(公告)日：2013-07-10
申请号：GB201300017
申请日：2013-01-02
Applicant: IBM
Inventor： JAHNES CHRISTOPHER VINCENT , STAMPER ANTHONY K
Abstract: A MEMS cantilever has a first wide portion attached to a support and a second narrower portion attached to the first portion. Tapered cantilever portions and beam structures having narrow and tapered portions are also described (figure 10). The reduction in width of the beam or cantilever in the vicinity of the pull-in portion reduces the occurrence of snap down when the structure is used as a varactor. The MEMS beam and cantilever structures may also be used for RF devices, contact switches or bulk acoustic wave resonators.
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公开(公告)号：DE69943235D1
公开(公告)日：2011-04-14
申请号：DE69943235
申请日：1999-01-29
Applicant: IBM , PERRAUD LAURENT CLAUDE
Inventor： GRILL ALFRED , JAHNES CHRISTOPHER VINCENT , PATEL VISHNUBHAI VITTHALBHAI , PERRAUD LAURENT CLAUDE
IPC: H01L23/48 , C23C16/32 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/29 , H01L23/522 , H01L23/532
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Patent Agency Ranking
公开(公告)号：DE69022841D1
公开(公告)日：1995-11-09
申请号：DE69022841
申请日：1990-12-07
Applicant: IBM
IPC: G11B11/10 , G11B11/105 , G11B11/12 , G11B11/18
Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.
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公开(公告)号：DE112011102136T5
公开(公告)日：2013-04-04
申请号：DE112011102136
申请日：2011-06-15
Applicant: IBM
Inventor： JAHNES CHRISTOPHER VINCENT , STAMPER ANTHONY
IPC: B81C1/00
Abstract: Ein Verfahren zum Ausbilden zumindest einer Kavität eines Mikrosystems (MEMS) beinhaltet ein Ausbilden einer ersten Opferkavitätenschicht über einer unteren Verdrahtungsschicht. Das Verfahren beinhaltet des Weiteren ein Ausbilden einer Schicht. Das Verfahren beinhaltet des Weiteren ein Ausbilden einer zweiten Opferkavitätenschicht über der ersten Opferschicht und in Kontakt mit der Schicht. Das Verfahren beinhaltet des Weiteren ein Ausbilden einer Abdeckung auf der zweiten Opferkavitätenschicht. Das Verfahren beinhaltet des Weiteren ein Ausbilden zumindest einer Austreiböffnung in der Abdeckung, sodass ein Abschnitt der zweiten Opferkavitätenschicht freigelegt wird. Das Verfahren beinhaltet des Weiteren ein Austreiben oder Ablösen der zweiten Opferkavitätenschicht so, dass eine obere Oberfläche der zweiten Opferkavitätenschicht eine untere Fläche der Abdeckung nicht mehr berührt, vor dem Austreiben oder Ablösen der ersten Opferkavitätenschicht, wodurch eine erste Kavität bzw. eine zweite Kavität ausgebildet wird.
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公开(公告)号：GB2494824A
公开(公告)日：2013-03-20
申请号：GB201300040
申请日：2011-06-15
Applicant: IBM
Inventor： STAMPER ANTHONY K , JAHNES CHRISTOPHER VINCENT
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：AT128783T
公开(公告)日：1995-10-15
申请号：AT90123487
申请日：1990-12-07
Applicant: IBM
IPC: G11B11/10 , G11B11/105 , G11B11/12 , G11B11/18
Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.
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公开(公告)号：GB2498264B
公开(公告)日：2014-07-16
申请号：GB201300017
申请日：2013-01-02
Applicant: IBM
Inventor： JAHNES CHRISTOPHER VINCENT , STAMPER ANTHONY K
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.
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