公开(公告)号：JP2002334850A

公开(公告)日：2002-11-22

申请号：JP2002096570

申请日：2002-03-29

Applicant: IBM

Inventor： GIEWONT KENNETH J ,  WANG YUN YU ,  RUSSELL AANTO ,  RANSOM CRAIG ,  COFFIN JUDITH ,  DOMENICUCCI ANTHONY ,  MACDONALD MICHAEL ,  JOHNSON BRIAN E

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/336 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a high-quality silicide layer having a high sheet resistance. SOLUTION: A method of preparing a semiconductor material for forming the silicide layer in selected areas is disclosed. In the representative embodiment, the method includes a step of removing at least one of a nitride film and an oxynitride film from the selected area, a step of removing metallic particles from the selected area, and a step of removing surface particles from the selected area. The method also includes a step of removing organics from the selected areas and a step of removing an oxide film layer from the selected areas.