公开(公告)号：JP2002334850A

公开(公告)日：2002-11-22

申请号：JP2002096570

申请日：2002-03-29

Applicant: IBM

Inventor： GIEWONT KENNETH J ,  WANG YUN YU ,  RUSSELL AANTO ,  RANSOM CRAIG ,  COFFIN JUDITH ,  DOMENICUCCI ANTHONY ,  MACDONALD MICHAEL ,  JOHNSON BRIAN E

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/336 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a high-quality silicide layer having a high sheet resistance. SOLUTION: A method of preparing a semiconductor material for forming the silicide layer in selected areas is disclosed. In the representative embodiment, the method includes a step of removing at least one of a nitride film and an oxynitride film from the selected area, a step of removing metallic particles from the selected area, and a step of removing surface particles from the selected area. The method also includes a step of removing organics from the selected areas and a step of removing an oxide film layer from the selected areas.

公开(公告)号：JPH10284463A

公开(公告)日：1998-10-23

申请号：JP31061997

申请日：1997-11-12

Applicant: IBM ,  TOSHIBA CORP

Inventor： JIN WAN U ,  NADAHARA SOICHI ,  SUSAN L COHEN ,  RUSSELL AANTO

IPC: H01L21/304 ,  F26B21/14 ,  H01L21/00

Abstract: PROBLEM TO BE SOLVED: To reduce the contamination on a substrate or deposited contaminants in the drying apparatus for drying the substrate such as semiconductor wafers. SOLUTION: An apparatus comprises a tank 12 contg. a liq. IPA 31, electric heating rods for boiling IPA in the tank 12 to produce the vapor, a manifold 42 disposed in the tank to bubble the liq. IPA 31 with a gas, and a controller 44 which suppresses the boiling of IPA when wafers 33 are initially fed in the tank and bubbles nitrogen gas in the boiling IPA 31 through the manifold.