公开(公告)号：DE2963787D1

公开(公告)日：1982-11-11

申请号：DE2963787

申请日：1979-10-12

Applicant: IBM

Inventor： COX DANIEL EDWARD ,  KANE SUSAN MARY ,  POWERS JOHN VINCENT

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/06 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34

Abstract: A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.