公开(公告)号：DE2963787D1

公开(公告)日：1982-11-11

申请号：DE2963787

申请日：1979-10-12

Applicant: IBM

Inventor： COX DANIEL EDWARD ,  KANE SUSAN MARY ,  POWERS JOHN VINCENT

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/06 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34

Abstract: A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.

公开(公告)号：DE3060701D1

公开(公告)日：1982-09-16

申请号：DE3060701

申请日：1980-04-25

Applicant: IBM

Inventor： AHN KIE YEUNG ,  COX DANIEL EDWARD

IPC: C23F4/00 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23F1/00

Abstract: A method for etching materials in which a solid, located in the vicinity of the substrate, is used to provide reactive species for etching the substrate. In contrast with prior art etching techniques, an ion beam is provided which strikes a solid source located in the vicinity of the substrate. Reactive gas species are given off by the solid source when it is hit by the ion beam and these species etch the substrate. Etch rates can be enhanced or retarded depending upon the composition of the solid mask. The process has particular utility in etching generally active metals such as Ti, Nb, Ta, NiFe, etc. which undergo a large change in etch rate when mixed gases, such as argon plus O2, CF4, CO, or CO2 (singularly or in combination) are used. As an example, solid TEFLON* can be used to surround the substrate during etching in order to generate active species, such as C and F, for etching of materials such as Ti, Si, NiFe, etc. Conductors and dielectrics can also be etched by this technique. * A trademark of E. I. Du Pont de Nemours.