公开(公告)号：DE2555299A1

公开(公告)日：1976-09-16

申请号：DE2555299

申请日：1975-12-09

Applicant: IBM

Inventor： AHN KIE YEUNG ,  HATZAKIS MICHAEL ,  POWERS JOHN VINCENT

IPC: G11C11/14 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H01L21/3205 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38 ,  H01L21/88 ,  C23C13/02 ,  C25D5/02 ,  C25D7/00 ,  C25D7/12 ,  H01F10/00

公开(公告)号：DE2758147A1

公开(公告)日：1978-07-13

申请号：DE2758147

申请日：1977-12-27

Applicant: IBM

Inventor： CASTELLANI EUGENE EVANS ,  POWERS JOHN VINCENT ,  ROMANKIW LUBOMYR TARAS

IPC: C25D7/00 ,  C25D3/56 ,  C25D5/08 ,  C25D17/00 ,  C25D21/12 ,  G11B5/31 ,  G11B5/858 ,  H01F10/14 ,  H01F41/14 ,  H01F41/26 ,  C25D3/12 ,  C25D3/20

Abstract: A thin film of low magnetostriction Permalloy 80% nickel - 20% iron +/- 1% is electroplated in a bath having a ratio of about 1.8:1 to 24:1 g/liter ratio of Ni to Fe ions with a plating current density from 10 ma/cm2 - 200 ma/cm2 when plating in sheet form or an Ni/Fe ratio of 25:1 to 85:1 with a current density of 2 ma/cm2 - 110 ma/cm2 when plating through a mask. The fluid in the system is constantly mixed, replenished with fresh iron, acid, and other reagents, is adjusted in temperature and subjected to a continuous laminar regime of mixing. Fresh solution is added to the bath from a reservoir where the above adjustments are made. The inlet for the fresh solution is at the lower end of the plating chamber and directed at a bath mixer which includes a slot through which the fresh solution is directed to optimize mixing in the plating chamber. Complexing agents are avoided. High speed plating is obtained with about 24.4 g/l of Ni++, 1.05 g/l of Fe++, 25 g/l of H3BO3, 0.2 g/l of Na saccharin and a pH of 1.5 to 3.6.

公开(公告)号：DE1247113B

公开(公告)日：1967-08-10

申请号：DEJ0029497

申请日：1965-12-02

Applicant: IBM

Inventor： GREBE KURT RUDOLPH ,  POWERS JOHN VINCENT

IPC: C25D3/46

公开(公告)号：DE2606563A1

公开(公告)日：1976-09-16

申请号：DE2606563

申请日：1976-02-19

Applicant: IBM

Inventor： AHN KIE YEUNG ,  HATZAKIS MICHAEL ,  POWERS JOHN VINCENT

IPC: H05K3/00 ,  C23F1/00 ,  G11C11/14 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H05K3/24 ,  H01F10/02 ,  C25D7/00 ,  G11C19/08

公开(公告)号：DE3070244D1

公开(公告)日：1985-04-04

申请号：DE3070244

申请日：1980-11-18

Applicant: IBM

Inventor： AHN KIE YEUNG ,  BAJOREK CHRISTOPHER HENRY ,  HO PAUL SIU-CHUNG ,  MILLER ROBERT JAMES ,  POWERS JOHN VINCENT

IPC: C23C26/00 ,  C23C28/00 ,  G11B5/31 ,  H01B1/02 ,  H01F41/34 ,  H01L21/3205 ,  H01L23/532 ,  H05K1/09 ,  H05K3/38 ,  G11C11/14 ,  H01L21/70 ,  H01L23/48 ,  H05K3/10

公开(公告)号：DE2963787D1

公开(公告)日：1982-11-11

申请号：DE2963787

申请日：1979-10-12

Applicant: IBM

Inventor： COX DANIEL EDWARD ,  KANE SUSAN MARY ,  POWERS JOHN VINCENT

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/06 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34

Abstract: A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.