公开(公告)号：DE602004026753D1

公开(公告)日：2010-06-02

申请号：DE602004026753

申请日：2004-09-08

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  IEONG MEIKEI ,  KEDZIERSKI JAKUB

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/336

Abstract: A method of fabricating complementary metal oxide semiconductor (CMOS) field effect transistors which includes selective doping and full silicidation of a polysilicon material comprising the gate electrode of the transistor. In one embodiment, prior to silicidation, the polysilicon is amorphized. In a further embodiment, siliciding is performed at a low substrate temperature.

公开(公告)号：AT465516T

公开(公告)日：2010-05-15

申请号：AT04766739

申请日：2004-09-08

Applicant: IBM

Inventor： CABRAL CYRIL ,  IEONG MEIKEI ,  KEDZIERSKI JAKUB

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/336

Abstract: A method of fabricating complementary metal oxide semiconductor (CMOS) field effect transistors which includes selective doping and full silicidation of a polysilicon material comprising the gate electrode of the transistor. In one embodiment, prior to silicidation, the polysilicon is amorphized. In a further embodiment, siliciding is performed at a low substrate temperature.