公开(公告)号：DE3582845D1

公开(公告)日：1991-06-20

申请号：DE3582845

申请日：1985-09-27

Applicant: IBM

Inventor： ARAPS CONSTANCE JOAN ,  KANDETZKE STEVEN M ,  KUTNER ELLEN LOIS ,  TAKACS MARK ANTHONY

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/762

Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.