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公开(公告)号：DE69016113T2
公开(公告)日：1995-06-29
申请号：DE69016113
申请日：1990-04-10
Applicant: IBM
Inventor： NMN CHENG SHIRLEY , ARAPS CONSTANCE JOAN , ARNOLD ALLEN JOSEPH , COFFIN JEFFREY THOMAS , NGUYEN LUU THANH
IPC: C11D7/50 , C23F11/12 , C23F11/14 , C23F15/00 , H01L21/304 , H01L21/306 , H05K3/26
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公开(公告)号：DE3485758D1
公开(公告)日：1992-07-09
申请号：DE3485758
申请日：1984-10-19
Applicant: IBM DEUTSCHLAND
Inventor： ARAPS CONSTANCE JOAN , KANDETZKE STEVEN MICHAEL , TAKACS MARK ANTHONY
IPC: H01L23/29 , C08F290/00 , C08F299/02 , C08G73/10 , H01L21/312 , H01L23/31
Abstract: Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. An electronic component comprising the cured product is also disclosed.
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公开(公告)号：DE3473969D1
公开(公告)日：1988-10-13
申请号：DE3473969
申请日：1984-11-23
Applicant: IBM
Inventor： ANDERSON JR , ARAPS CONSTANCE JOAN , LOTSKO CATHERINE AGNES
IPC: H01L21/3205 , H01L21/027 , H01L21/306 , H01L21/3105 , H01L21/00 , G03F7/02 , H01L21/312 , H01L21/31
Abstract: A process for forming a desired metal pattern on a substrate which comprises forming a mask of a thermally depolymerizable polymer on the substrate with a pattern of openings complementary to the desired metal pattern, blanket coating the substrate and the mask with a metal, heating to depolymerize the thermally depolymerizable polymer, and removing the thermally depolymerizable polymer and metal thereover in a mild solvent at moderate temperatures leaving the metal having the desired pattern on the substrate.
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公开(公告)号：DE69016113D1
公开(公告)日：1995-03-02
申请号：DE69016113
申请日：1990-04-10
Applicant: IBM
Inventor： NMN CHENG SHIRLEY , ARAPS CONSTANCE JOAN , ARNOLD ALLEN JOSEPH , COFFIN JEFFREY THOMAS , NGUYEN LUU THANH
IPC: C11D7/50 , C23F11/12 , C23F11/14 , C23F15/00 , H01L21/304 , H01L21/306 , H05K3/26
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公开(公告)号：DE3473689D1
公开(公告)日：1988-09-29
申请号：DE3473689
申请日：1984-06-28
Applicant: IBM
IPC: H01L21/28 , C23C14/04 , G03F7/039 , G03F7/36 , H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/00 , G03F7/02
Abstract: The process for forming a desired metal pattern on a substrate (35) comprises forming a mask of a thermally depolymerizable polymer (40) on the substrate (35) with a pattern of openings (70) complementary to the desired metal pattern, blanket coating the substrate (35) and the mask (40) with a metal (60), heating the substrate (35) to depolymerize the depolymerizable polymer (40), cooling the surface of the metal (60) to thereby delaminate the metal coated in areas where thermally depolymerizable polymer (40) is present, removing the delaminated metal where necessary, and optionally plasma etching the depolymerized polymer, if residue thereof remains, to remove the same from said substrate.
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Patent Agency Ranking
公开(公告)号：DE3851647T2
公开(公告)日：1995-04-06
申请号：DE3851647
申请日：1988-02-19
Applicant: IBM
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公开(公告)号：DE3485828D1
公开(公告)日：1992-08-27
申请号：DE3485828
申请日：1984-10-19
Applicant: IBM
Inventor： ARAPS CONSTANCE JOAN , KANDETZKE STEVEN MICHAEL , TAKACS MARK ANTHONY
IPC: C08F299/00 , C08F290/00 , C08F299/02 , C08G73/00 , C08G73/10 , G11C11/416 , H01B3/30 , H01L21/312 , H01L21/76 , H01L21/762 , H01L23/532 , H03F3/45 , H05K1/00 , H05K1/03 , H05K3/46 , H01L23/52
Abstract: Electronic components are disclosed comprising an insulator which is the in situ cured reaction product of a polymerizable oligomer which is end capped with a vinyl and/or acetylenic end groups. A process for forming the same is also disclosed.
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公开(公告)号：DE3586231D1
公开(公告)日：1992-07-23
申请号：DE3586231
申请日：1985-09-24
Applicant: IBM
Inventor： ARAPS CONSTANCE JOAN , CZORNYJ GEORGE , KANDETZKE STEVEN M , TAKACS MARK ANTHONY
IPC: C08G73/10 , H01L21/31 , H01L21/312 , H01L21/762 , H01L21/76
Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imides or mixtures thereof, wherein the end groups of the polymerizable oligomer are end-capped with a vinyl or acetylenic end group.
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公开(公告)号：DE3582845D1
公开(公告)日：1991-06-20
申请号：DE3582845
申请日：1985-09-27
Applicant: IBM
Inventor： ARAPS CONSTANCE JOAN , KANDETZKE STEVEN M , KUTNER ELLEN LOIS , TAKACS MARK ANTHONY
IPC: H01L21/76 , H01L21/302 , H01L21/3065 , H01L21/312 , H01L21/762
Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.
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公开(公告)号：DE3851647D1
公开(公告)日：1994-11-03
申请号：DE3851647
申请日：1988-02-19
Applicant: IBM
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