公开(公告)号：CA1308817C

公开(公告)日：1992-10-13

申请号：CA593138

申请日：1989-03-08

Applicant: IBM

Inventor： BAISE ARNOLD I ,  CASEY JON A ,  CLARKE DAVID R ,  DIVAKARUNI RENUKA S ,  DUNKEL WERNER E ,  HUMENIK JAMES N ,  KANDETZKE STEVEN M ,  KIRBY DANIEL P ,  KNICKERBOCKER JOHN U ,  MATTS AMY T ,  TAKACS MARK A ,  WIGGINS LOVELL B

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/14

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength. FI9-86-046

公开(公告)号：CA1326789C

公开(公告)日：1994-02-08

申请号：CA534156

申请日：1987-04-08

Applicant: IBM

Inventor： ANDERSON HERBERT R JR ,  DIVAKARUNI RENUKA S ,  DYNYS JOSEPH M ,  KANDETZKE STEVEN M ,  KIRBY DANIEL P ,  MASTER RAJ N ,  CASEY JON A

IPC: H05K3/46 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/28

Abstract: METHOD OF FAKING MULTILAYERED CERAMIC STRUCTURES HAVING AN INTERNAL DISTRIBUTION OF COPPER-BASED CONDUCTORS The Present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.

公开(公告)号：DE3586231D1

公开(公告)日：1992-07-23

申请号：DE3586231

申请日：1985-09-24

Applicant: IBM

Inventor： ARAPS CONSTANCE JOAN ,  CZORNYJ GEORGE ,  KANDETZKE STEVEN M ,  TAKACS MARK ANTHONY

IPC: C08G73/10 ,  H01L21/31 ,  H01L21/312 ,  H01L21/762 ,  H01L21/76

Abstract: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imides or mixtures thereof, wherein the end groups of the polymerizable oligomer are end-capped with a vinyl or acetylenic end group.

公开(公告)号：DE3582845D1

公开(公告)日：1991-06-20

申请号：DE3582845

申请日：1985-09-27

Applicant: IBM

Inventor： ARAPS CONSTANCE JOAN ,  KANDETZKE STEVEN M ,  KUTNER ELLEN LOIS ,  TAKACS MARK ANTHONY

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/762

Abstract: A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.