公开(公告)号：DE68919561D1

公开(公告)日：1995-01-12

申请号：DE68919561

申请日：1989-05-05

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALLESSANDRO CESARE ,  HOH PETER DAVID ,  LACEY DIANNE LYNN

IPC: H01L21/318 ,  H01L29/78 ,  H01L21/31

Abstract: A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.

公开(公告)号：DE68919561T2

公开(公告)日：1995-05-24

申请号：DE68919561

申请日：1989-05-05

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALLESSANDRO CESARE ,  HOH PETER DAVID ,  LACEY DIANNE LYNN

IPC: H01L21/318 ,  H01L29/78 ,  H01L21/31

Abstract: A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.