公开(公告)号：JPS6320837A

公开(公告)日：1988-01-28

申请号：JP13200587

申请日：1987-05-29

Applicant: IBM

Inventor： GRAF VOLKER ,  MOHR THEODOR OSKAR ,  BUCHMANN PETER LEO ,  VETTIGER PETER ,  HOH PETER DAVID

IPC: H01L21/033 ,  H01L21/285 ,  H01L21/311 ,  H01L21/318 ,  H01L21/336 ,  H01L21/338 ,  H01L29/812

公开(公告)号：DE68919561D1

公开(公告)日：1995-01-12

申请号：DE68919561

申请日：1989-05-05

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALLESSANDRO CESARE ,  HOH PETER DAVID ,  LACEY DIANNE LYNN

IPC: H01L21/318 ,  H01L29/78 ,  H01L21/31

Abstract: A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.

公开(公告)号：DE3685495D1

公开(公告)日：1992-07-02

申请号：DE3685495

申请日：1986-07-11

Applicant: IBM

Inventor： GRAF VOLKER ,  MOHR THEODOR OSKAR ,  BUCHMANN PETER LEO ,  VETTIGER PETER ,  HOH PETER DAVID

IPC: H01L21/033 ,  H01L21/285 ,  H01L21/311 ,  H01L21/318 ,  H01L21/336 ,  H01L21/338 ,  H01L29/812 ,  H01L21/00 ,  H01L21/28

Abstract: Undercut mask profiles are formed in a semiconductor process by depositing a first plasma CVD nitride layer followed by a second plasma CVD nitride layer at a different excitation frequency, so that the two layer have different etch rates; and patterning and etching the double layer structure to form the desired undercut profile. Method is simple and easy to control and the undercut profile has good temp. stability. The nitride layer are SiNx, SiOxNy or BNx. The gas compsn. for each CVD stage is different, pref. NH3, N2 and SiH4 for the first stage; and N2 and SiH4 for the second stage. The RF frequency is 1-50 MH2 for the first stage and below 100 MHz for the second stage.

公开(公告)号：DE68919561T2

公开(公告)日：1995-05-24

申请号：DE68919561

申请日：1989-05-05

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALLESSANDRO CESARE ,  HOH PETER DAVID ,  LACEY DIANNE LYNN

IPC: H01L21/318 ,  H01L29/78 ,  H01L21/31

Abstract: A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.