公开(公告)号：JPH10135452A

公开(公告)日：1998-05-22

申请号：JP29373097

申请日：1997-10-27

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  MCFEELY FENTON READ ,  YURKAS JOHN JACOB

IPC: H01L29/78 ,  C23C16/16 ,  H01L21/28 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an intermediate gap work function tungsten (W) gate and a W electrode directly on a gate dielectric such as an ultra-thin gate dielectric for use in a high speed and high density advanced metal-oxide semiconductor(MOS) and a complementary metal oxide film semiconductor(CMOS) device, and an MOS device and a CMOS device each having at least one W gate or W electrode formed by the above method by chemical vapor deposition(CVD), and to enable the method to be applied to the manufacture of a W electrode which can be used in a quantum device. SOLUTION: This method comprises the steps of (a) vapor depositing a tungsten (W) layer 58 on a gate dielectric 56 arranged on a semiconductor substrate 50 by CVD using W(CO)6 as a material substance, and (b) patterning the structure formed by the step (a) by using a lithography technique in order to form a MOS device including an intermediate gap work function W gate on the gate dielectric 56.

公开(公告)号：DE68919561D1

公开(公告)日：1995-01-12

申请号：DE68919561

申请日：1989-05-05

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALLESSANDRO CESARE ,  HOH PETER DAVID ,  LACEY DIANNE LYNN

IPC: H01L21/318 ,  H01L29/78 ,  H01L21/31

Abstract: A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.

公开(公告)号：SG53082A1

公开(公告)日：1998-09-28

申请号：SG1997003593

申请日：1997-09-26

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  MCFEELY FENTON READ ,  YURKAS JOHN JACOB

IPC: H01L29/78 ,  C23C16/16 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/365

Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.

公开(公告)号：DE69304503D1

公开(公告)日：1996-10-10

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

公开(公告)号：DE69304503T2

公开(公告)日：1997-03-20

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

公开(公告)号：DE68919561T2

公开(公告)日：1995-05-24

申请号：DE68919561

申请日：1989-05-05

Applicant: IBM

Inventor： BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALLESSANDRO CESARE ,  HOH PETER DAVID ,  LACEY DIANNE LYNN

IPC: H01L21/318 ,  H01L29/78 ,  H01L21/31

Abstract: A method for passivating the surface of a compound semiconductor (12) comprises annealing the substrate (12) to form an anion rich surface layer containing cationic and anionic oxides and stripping the oxides to leave only a very thin anionic layer on the surface. The substrate (12) is then subjected to an H2 plasma cleaning to remove chemisorbed oxygen. An N2 plasma cleaning is then performed to form an anionic nitride layer (20) that is free of any cationic nitride. A layer of insulating material (22), such as, a native or other oxide, or a nitride, is deposited. The resulting structure (10) has a very low interface state density such that the Fermi level may be swept through the entire band gap.