公开(公告)号：IE970695A1

公开(公告)日：1998-04-08

申请号：IE970695

申请日：1997-09-24

Applicant: IBM

Inventor： LEE WEN YAUNG ,  MAURI DANIELE

IPC: G11B5/39 ,  G11B5/40 ,  H01F10/32

Abstract: An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni89Fe21)60Cr40 and Ni60Cr40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25Å and 50Å respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.

公开(公告)号：MY115680A

公开(公告)日：2003-08-30

申请号：MYPI9703895

申请日：1997-08-25

Applicant: IBM

Inventor： LEE WEN YAUNG ,  MAURI DANIEL

IPC: G11B5/39 ,  G11B5/40 ,  H01F10/32

Abstract: AN MR SENSOR WITH AN IMPROVED MR COEFFICIENT AND IMPROVED THERMAL STABILITY IS PROVIDED BY EMPLOYING ONE OR MORE CHROMIUM BASED SPACER LAYERS WHICH ARE INTERFACIALLY ADJACENT A PERMALLOY (NIFE) STRIPE. THE CHROMIUM BASED SPACER LAYERS MAY BE NIFECR OR NICR. THE BEST COMPOSITIONS HAVE BEEN FOUND TO BE (NI89FE21)60CR40 AND NI60CR40. FOR NICR THE MR COEFFICIENT OF THE MR STRIPE IS MOST ENHANCED WHEN THE NICR LAYERS IS DEPOSITED ON A LAYER OF TANTALUM (TA). FURTHER, WHEN THE THICKNESSES OF THE NIFECR AND THE NICR LAYERS ARE 25Å AND 50Å RESPECTIVELY THE MR COEFFICIENTS ARE OPTIMIZED. BOTH SPACER LAYERS HAVE A HIGH RESISTANCE COMPATIBLE WITH LOW SHUNTING OF THE SENCE CURRENT. (FIG.1)

公开(公告)号：IE80856B1

公开(公告)日：1999-04-21

申请号：IE970695

申请日：1997-09-24

Applicant: IBM

Inventor： LEE WEN YAUNG ,  MAURI DANIELE

IPC: G11B5/39 ,  G11B5/40 ,  H01F10/32

Abstract: An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni89Fe21)60Cr40 and Ni60Cr40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25 ANGSTROM and 50 ANGSTROM respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.

公开(公告)号：SG53010A1

公开(公告)日：1998-09-28

申请号：SG1997002396

申请日：1997-07-07

Applicant: IBM

Inventor： LEE WEN YAUNG ,  MAURI DANIELE

IPC: G11B5/39 ,  G11B5/40 ,  H01F10/32

Abstract: An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni89Fe21)60Cr40 and Ni60Cr40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25 ANGSTROM and 50 ANGSTROM respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.

公开(公告)号：DE3573858D1

公开(公告)日：1989-11-23

申请号：DE3573858

申请日：1985-05-10

Applicant: IBM

Inventor： BARTON ROGER WESTWOOD ,  COUFAL HANS JUERGEN ,  JIPSON VICTOR BURR ,  LEE WEN YAUNG

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/243 ,  G11B7/257 ,  G11B9/00 ,  G11B11/00 ,  G11C13/04 ,  G11B7/24

Abstract: A method of and structure for optical recording by energy-induced homogenization or fractionation is disclosed. When the,method involves fractionation, a film is provided that contains a homogeneous mixture of a matrix material and an incident energy absorbing material. A spot on the film is treated with sufficient energy in the form of electric fields, radiation or heat, or combinations thereof to effect fractionation and/or homogenization of the film which will undergo further physical state transition only under treatment with additional energy. In a preferred embodiment, the fractionation is effected by laser radiation. The laser irradiated spot becomes inhomogeneous and can be detected by the resulting changes in its optical properties. When the method involves homogenization, a film is provided that contains a inhomogenous mixture. The energy treated spot in this case becomes homogeneous without undergoing a phase transition between the amorphous and crystalline phases. Numerous combinations of fractionation and homogenization can result in the writing and erasing of information in a storage device.