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公开(公告)号：JP2001195710A
公开(公告)日：2001-07-19
申请号：JP2000327713
申请日：2000-10-26
Applicant: IBM
Inventor： LIN TSANN , MAURI DANIELE
IPC: G01R33/09 , G11B5/012 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/00 , H01F10/32 , H01F41/18 , H01L43/08 , H01L43/12
Abstract: PROBLEM TO BE SOLVED: To improve magnetic characteristics, macro magnetoresistance characteristics and heat stability with respect to a spin valve sensor. SOLUTION: In a spin valve sensor 300, a three-ply seed layer structure 302 is disposed between a 1st reproduction gap layer 216 and a ferromagnetic free layer 202. Nickel-manganese (Ni-Mn) is preferably used for an antiferromagnetic pinning layer 214. The three-ply seed layer structure 302 has a 1st seed layer 304 comprising a 1st metal oxide, a 2nd seed layer 306 comprising a 2nd metal oxide and a 3rd seed layer 308 comprising a nonmagnetic metal. Preferably the 1st seed layer 304 comprises nickel oxide (NiO), the 2nd seed layer 306 comprises nickel manganese oxide (NiMnOX) and the 3rd seed layer 308 comprises copper (Cu).
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2.发明专利
公开(公告)号：JP2003158313A
公开(公告)日：2003-05-30
申请号：JP2002198104
申请日：2002-07-08
Applicant: IBM
Inventor： LIN TSANN , MAURI DANIELE
Abstract: PROBLEM TO BE SOLVED: To provide a spin valve sensor using one or a plurality of in situ oxide film as a cap layer or a gap layer in order to increase the GMR coefficient and to improve temperature stability. SOLUTION: A step for forming a multilayer metal film on a wafer and then transferring a wafer, in vacuum, to an oxidizing module performing in situ oxidation is included. When that method is used in order to form a cap layer, the cap layer is required to be oxidized partially. Subsequently, magnetic field annealing can be performed without causing intefacial mixture or oxygen diffusion substantially. A resulting spin valve sensor exhibits improvement of temperature stability principally attained through increase of GMR coefficient due to induced mirror face scattering of conduction electrons and protection of a fundamental detection layer against intefacial mixture or oxygen diffusion during annealing process. The gap layer can also be formed of multilayer in situ deposition and oxidation of a metal film.
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公开(公告)号：IE970695A1
公开(公告)日：1998-04-08
申请号：IE970695
申请日：1997-09-24
Applicant: IBM
Inventor： LEE WEN YAUNG , MAURI DANIELE
Abstract: An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni89Fe21)60Cr40 and Ni60Cr40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25Å and 50Å respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.
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公开(公告)号：SG42305A1
公开(公告)日：1997-08-15
申请号：SG1996000086
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：DE69534314T2
公开(公告)日：2006-04-20
申请号：DE69534314
申请日：1995-05-02
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , GURNEY BRUCE ALVIN , HEIM DAVID EUGENE , LEFAKIS HARALAMBOS , MAURI DANIELE , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: An SVMR sensor (60) having a self-pinned laminated layer (70) with at least two ferromagnetic films (72,74) antiferromagnetically coupled to one another across a thin antiferromagnetically (AF) coupling film (73). Since the two ferromagnetic films (72,74) in this laminated layer (70) have their magnetic moments aligned antiparallel, their two magnetic moments can be made to essentially cancel by making the two ferromagnetic films (72,74) of substantially the same thickness. The magnetic field energy generated by the signal field acting on this laminated layer (70) will be significantly less than the effective anisotropy energy of the laminated layer (70). As a result, the laminated layer (70) will not rotate in the presence of the signal field, but will be "self-pinned". A hard-bias or exchange bias layer in not needed, also eliminating the need for Ni-Mn and its associated high-temperature process.
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Patent Agency Ranking
公开(公告)号：SG44386A1
公开(公告)日：1997-12-19
申请号：SG1996000075
申请日：1993-05-21
Applicant: IBM
Inventor： LIN TSANN , HOWARD JAMES KENT , HWANG CHERNGYE , MAURI DANIELE , STAUD NORBERT
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公开(公告)号：CA2054580C
公开(公告)日：1994-05-03
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: MAGNETORESISTIVE SENSOR BASED ON THE SPIN VALVE EFFECT A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：CA2054580A1
公开(公告)日：1992-06-12
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：DE69132027D1
公开(公告)日：2000-04-13
申请号：DE69132027
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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10.发明专利
公开(公告)号：SG53010A1
公开(公告)日：1998-09-28
申请号：SG1997002396
申请日：1997-07-07
Applicant: IBM
Inventor： LEE WEN YAUNG , MAURI DANIELE
Abstract: An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni89Fe21)60Cr40 and Ni60Cr40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25 ANGSTROM and 50 ANGSTROM respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.
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