公开(公告)号：WO2013151625A2

公开(公告)日：2013-10-10

申请号：PCT/US2013026779

申请日：2013-02-20

Applicant: IBM

Inventor： CHANG LELAND ,  LIN CHANG-HSUN ,  LO SHIH-HSIEN ,  SLEIGHT JEFFREY W

IPC: H01L21/336

CPC classification number: H01L29/7833 ,  H01L27/0207 ,  H01L27/1104 ,  H01L29/6659

Abstract: A static random access memory fabrication method includes forming a gate stack on a substrate, forming isolating spacers adjacent the gate stack, the isolating spacers and gate stack having a gate length, forming a source and drain region adjacent the gate stack, which generates an effective gate length, wherein the source and drain regions are formed from a low extension dose implant that varies a difference between the gate length and the effective gate length.

Abstract translation: 一种静态随机存取存储器制造方法包括在衬底上形成栅极堆叠，在栅极叠层附近形成隔离间隔物，隔离间隔物和栅极叠层具有栅极长度，形成与栅极堆叠相邻的源极和漏极区域，其产生有效的 栅极长度，其中源极和漏极区域由改变栅极长度和有效栅极长度之间的差异的低延伸剂量注入形成。