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    SCALING OF BIPOLAR TRANSISTORS
    2.
    发明申请
    SCALING OF BIPOLAR TRANSISTORS 审中-公开
    双极晶体管的放大

    公开(公告)号：WO2011008359A3

    公开(公告)日：2011-03-10

    申请号：PCT/US2010037149

    申请日：2010-06-03

    Applicant: IBM ,  JOSEPH ALVIN J ,  MALLADI RAMANA M ,  SLINKMAN JAMES A

    Inventor： JOSEPH ALVIN J ,  MALLADI RAMANA M ,  SLINKMAN JAMES A

    IPC: H01L21/331 ,  H01L29/73

    CPC classification number: H01L29/66272 ,  G06F17/5009 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/8249 ,  H01L27/0207 ,  H01L29/7322 ,  Y02P90/265

    Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor (240 of FIG. 18); scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor (245); determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling (250); and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design (255) to generate a stress compensated scaled design of the bipolar transistor (260).

    Abstract translation: 双极晶体管结构，双极晶体管的设计和制造方法，设计具有双极晶体管的电路的方法。 设计双极晶体管的方法包括：选择双极晶体管（图18的240）的初始设计; 缩放双极晶体管的初始设计以产生双极晶体管（245）的缩放设计; 确定在缩放之后双极晶体管的发射极的尺寸（250）是否需要双极晶体管的缩放设计的应力补偿; 并且如果需要对双极晶体管的缩放设计的应力补偿，则调整缩放设计的沟槽隔离布局级别相对于缩放设计（255）的发射器布局级别的布局的布局，以产生应力补偿缩放 双极晶体管（260）的设计。

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