公开(公告)号：WO2007063044A3

公开(公告)日：2007-11-08

申请号：PCT/EP2006068939

申请日：2006-11-27

Applicant: IBM ,  IBM UK ,  GRECO STEPHEN EDWARD ,  HEDBERG ERIK LEIGH ,  JUNG DAE-YOUNG ,  MCLAUGHLIN PAUL STEPHEN ,  MUZZY CHRISTOPHER DAVID ,  ROHRER NORMAN JAY ,  WYNNE JEAN ELIZABETH

Inventor： GRECO STEPHEN EDWARD ,  HEDBERG ERIK LEIGH ,  JUNG DAE-YOUNG ,  MCLAUGHLIN PAUL STEPHEN ,  MUZZY CHRISTOPHER DAVID ,  ROHRER NORMAN JAY ,  WYNNE JEAN ELIZABETH

IPC: H01L23/525

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a laser fuse structure for high power applications. Specifically, the laser fuse structure of the present invention comprises first and second conductive supporting elements (12a, 12b) , at least one conductive fusible link (14) , first and second connection elements (20a, 20b) , and first and second metal lines (22a, 22b) . The conductive supporting elements (12a, 12b) , the conductive fusible link (14) , and the metal lines (22a, 22b) are located at a first metal level (3) , while the connect elements (20a, 20b) are located at a second, different metal level (4) and are connected to the conductive supporting elements (12a, 12b) and the metal lines (22a, 22b) by conductive via stacks (18a, 18b, 23a, 23b) that extend between the first and second metal levels (3, 4).

Abstract translation: 本发明涉及一种用于大功率应用的激光熔丝结构。 具体地，本发明的激光熔丝结构包括第一和第二导电支撑元件（12a，12b），至少一个导电熔丝（14），第一和第二连接元件（20a，20b）以及第一和第二金属线 （22a，22b）。 导电支撑元件（12a，12b），导电熔丝（14）和金属线（22a，22b）位于第一金属层（3）处，而连接元件（20a，20b）位于 第二不同的金属级（4），并且通过导电通孔叠层（18a，18b，23a，23b）与导电支撑元件（12a，12b）和金属线（22a，22b）连接， 第二金属含量（3,4）。

公开(公告)号：JP2010157703A

公开(公告)日：2010-07-15

申请号：JP2009271304

申请日：2009-11-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  GAMBINO JEFFREY P ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID ,  SULLIVAN TIMOTHY DOOLING

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05088 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide structures with improved solder bump connections that prevent cracking and peeling, and to provide a method of fabricating such structures.
SOLUTION: The method includes steps of: forming an upper wiring layer in dielectric layers 10, 20 and 22; and depositing one or more dielectric layers on the upper wiring layer. The method further includes a step of forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes a step of depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有改善的防止开裂和剥离的焊料凸块连接的结构，并提供制造这种结构的方法。 解决方案：该方法包括以下步骤：在电介质层10,20和22中形成上布线层; 以及在所述上布线层上沉积一个或多个介电层。 该方法还包括在延伸到上布线层的一个或多个介电层中形成多个离散沟槽的步骤。 该方法还包括在多个离散的沟槽中沉积限界金属冶金或凸块下的冶金以形成与上部绞合层接触的离散的金属岛的步骤。 形成与多个离散金属岛电连接的焊料凸块。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2011023719A

公开(公告)日：2011-02-03

申请号：JP2010157590

申请日：2010-07-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  GAMBINO JEFFREY P ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID ,  QUESTAD DAVID L ,  SULLIVAN TIMOTHY DOOLING ,  PAUL FORTIER

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/03005 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05016 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05552 ,  H01L2224/05563 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a control collapse chip connection (C4) and its manufacturing method, and particularly, a structure to improve reliability of lead-free C4 interconnection and its method. SOLUTION: The structure includes a ball limited metalization (BLM) layer and a solder ball of control collapse chip connection (C4) formed on the BLM layer. Moreover, the structure includes the final metal pad layer under the BLM layer and a cap layer under the final metal pad layer. Then the structure includes an air gap between the final metal pad layer and one of the BLM layer and cap layer under the C4 solder ball. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供控制崩溃芯片连接（C4）的结构及其制造方法，特别是提高无铅C4互连的可靠性的结构及其方法。 解决方案：该结构包括在BLM层上形成的球限制金属化（BLM）层和控制崩溃芯片连接（C4）的焊球。 此外，该结构包括在BLM层下面的最终金属焊盘层和在最终金属焊盘层下面的覆盖层。 然后，该结构在最终金属焊盘层与C4焊球之下的BLM层和盖层之一之间包括气隙。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010157698A

公开(公告)日：2010-07-15

申请号：JP2009267454

申请日：2009-11-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GAMBINO JEFFREY P ,  DAUBENSPECK TIMOTHY HARRISON ,  SULLIVAN TIMOTHY DOOLING ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID

IPC: H01L21/60 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: PROBLEM TO BE SOLVED: To provide structures with improved solder bump connections and methods of fabricating such structures. SOLUTION: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的焊料凸块连接的结构和制造这种结构的方法。 解决方案：本文提供了具有改善的焊料凸点连接的结构和制造这种结构的方法。 该结构包括在电介质层中形成的通孔，以露出形成在通孔中和电介质层上的接触焊盘和捕获焊盘。 捕获垫在电介质层上具有开口以形成分段特征。 焊料凸块沉积在捕获垫上并且在介电层上沉积开口。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：AT490552T

公开(公告)日：2010-12-15

申请号：AT07822110

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  MUZZY CHRISTOPHER DAVID ,  GAMBINO JEFFREY PETER ,  SAUTER WOLFGANG

IPC: H01L23/31 ,  H01L23/485

Abstract: Methods of forming wire and solder bonds are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer; forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region; forming the solder bond to the solder bond metal region while the wire bond metal region is covered; exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and forming the wire bond to the wire bond metal region. Wire bonds and solder bonds can be made accessible on a single multi-part wafer (MPW) or on a single chip, if necessary, and can be formed substantially simultaneously.

公开(公告)号：DE602007010978D1

公开(公告)日：2011-01-13

申请号：DE602007010978

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  MUZZY CHRISTOPHER DAVID ,  GAMBINO JEFFREY PETER ,  SAUTER WOLFGANG

IPC: H01L23/31 ,  H01L23/485

公开(公告)号：DE602007012367D1

公开(公告)日：2011-03-17

申请号：DE602007012367

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY PETER ,  MUZZY CHRISTOPHER DAVID

IPC: B23K1/20 ,  B23K20/24 ,  H01L25/065

公开(公告)号：AT497419T

公开(公告)日：2011-02-15

申请号：AT07822113

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY PETER ,  MUZZY CHRISTOPHER DAVID

IPC: B23K1/20 ,  B23K20/24 ,  H01L25/065

Abstract: Methods of forming wire and solder bond structures are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond; forming a protective layer over the wire bond metal region only; forming a silicon nitride layer over a silicon oxide layer over the wire bond metal region and the solder bond metal region; forming the solder bond to the solder bond metal region while maintaining the wire bond metal region covered; exposing the wire bond metal region including removing the protective layer; and forming the wire bond to the wire bond metal region. Wire bond and solder bond structures can be made accessible on a single multi-part wafer (MPW) wafer or on a single chip, if necessary.