公开(公告)号：JP2010157703A

公开(公告)日：2010-07-15

申请号：JP2009271304

申请日：2009-11-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  GAMBINO JEFFREY P ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID ,  SULLIVAN TIMOTHY DOOLING

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05088 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide structures with improved solder bump connections that prevent cracking and peeling, and to provide a method of fabricating such structures.
SOLUTION: The method includes steps of: forming an upper wiring layer in dielectric layers 10, 20 and 22; and depositing one or more dielectric layers on the upper wiring layer. The method further includes a step of forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes a step of depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有改善的防止开裂和剥离的焊料凸块连接的结构，并提供制造这种结构的方法。 解决方案：该方法包括以下步骤：在电介质层10,20和22中形成上布线层; 以及在所述上布线层上沉积一个或多个介电层。 该方法还包括在延伸到上布线层的一个或多个介电层中形成多个离散沟槽的步骤。 该方法还包括在多个离散的沟槽中沉积限界金属冶金或凸块下的冶金以形成与上部绞合层接触的离散的金属岛的步骤。 形成与多个离散金属岛电连接的焊料凸块。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010251754A

公开(公告)日：2010-11-04

申请号：JP2010091384

申请日：2010-04-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  SULLIVAN TIMOTHY DOOLING ,  WRIGHT STEVEN LORENZ ,  SAUTER WOLFGANG ,  SPROGIS EDMUND JURIS

IPC: H01L21/3205 ,  H01L21/60 ,  H01L23/52

CPC classification number: H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide a metal wiring structure for a uniform current density in a C4 ball. SOLUTION: A sub-pad assembly of a metal structure is arranged directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure that comes into contact with the metal pad and a set of metal vias that provide electrical connection between the upper level metal line structure and a lower level metal line structure arranged underneath of the upper level metal line structure. The reliability of a C4 ball is improved by using a metal pad structure having a set of integrated metal vias that are divided and distributed to promote an uniform current density distribution in the C4 ball. The areal density of the cross-sectional area of the plurality of metal vias is higher at the center part of the metal pad than at the peripheral edge part of the flat part of the metal pad. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在C4球中具有均匀电流密度的金属布线结构。

解决方案：金属结构的子焊盘组件直接布置在金属焊盘下方。 子焊盘组件包括与金属焊盘接触的上层金属线结构和一组金属通孔，其在上层金属线结构和布置在上层下方的下层金属线结构之间提供电连接 金属线结构。 通过使用具有一组集成金属通孔的金属焊盘结构，C4球的可靠性得到改善，该金属焊盘结构被分割和分配以促进C4球中均匀的电流密度分布。 金属焊盘的中心部分的金属通孔的横截面积的面密度比在金属焊盘的平坦部分的周缘部分高。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011023719A

公开(公告)日：2011-02-03

申请号：JP2010157590

申请日：2010-07-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  GAMBINO JEFFREY P ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID ,  QUESTAD DAVID L ,  SULLIVAN TIMOTHY DOOLING ,  PAUL FORTIER

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/03005 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05016 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05552 ,  H01L2224/05563 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a control collapse chip connection (C4) and its manufacturing method, and particularly, a structure to improve reliability of lead-free C4 interconnection and its method. SOLUTION: The structure includes a ball limited metalization (BLM) layer and a solder ball of control collapse chip connection (C4) formed on the BLM layer. Moreover, the structure includes the final metal pad layer under the BLM layer and a cap layer under the final metal pad layer. Then the structure includes an air gap between the final metal pad layer and one of the BLM layer and cap layer under the C4 solder ball. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供控制崩溃芯片连接（C4）的结构及其制造方法，特别是提高无铅C4互连的可靠性的结构及其方法。 解决方案：该结构包括在BLM层上形成的球限制金属化（BLM）层和控制崩溃芯片连接（C4）的焊球。 此外，该结构包括在BLM层下面的最终金属焊盘层和在最终金属焊盘层下面的覆盖层。 然后，该结构在最终金属焊盘层与C4焊球之下的BLM层和盖层之一之间包括气隙。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010157698A

公开(公告)日：2010-07-15

申请号：JP2009267454

申请日：2009-11-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GAMBINO JEFFREY P ,  DAUBENSPECK TIMOTHY HARRISON ,  SULLIVAN TIMOTHY DOOLING ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID

IPC: H01L21/60 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: PROBLEM TO BE SOLVED: To provide structures with improved solder bump connections and methods of fabricating such structures. SOLUTION: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的焊料凸块连接的结构和制造这种结构的方法。 解决方案：本文提供了具有改善的焊料凸点连接的结构和制造这种结构的方法。 该结构包括在电介质层中形成的通孔，以露出形成在通孔中和电介质层上的接触焊盘和捕获焊盘。 捕获垫在电介质层上具有开口以形成分段特征。 焊料凸块沉积在捕获垫上并且在介电层上沉积开口。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010251741A

公开(公告)日：2010-11-04

申请号：JP2010074774

申请日：2010-03-29

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ARVIN CHARLES L ,  SEMKOW KRYSTYNA WALERIA ,  BEZAMA RASCHID JOSE ,  SULLIVAN TIMOTHY DOOLING ,  COX HARRY DAVID ,  DAUBENSPECK TIMOTHY HARRISON

IPC: H01L21/60

CPC classification number: H01L24/05 ,  C25D5/02 ,  C25D5/14 ,  C25D5/48 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05075 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13099 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/013 ,  H01L2924/01027

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable copper structure for improving current carrying capabilities (e.g., current spreading) of an interconnect, and to provide a method of fabricating the same. SOLUTION: The interconnect structure provides a highly reliable copper interconnect structure for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: one adhesion layer; one plated barrier layer; and one plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供用于改善互连的载流能力（例如电流扩展）的高可靠性铜结构，并提供其制造方法。 解决方案：互连结构提供了高可靠性的铜互连结构，用于改善载流能力（例如电流扩展）。 该结构包括在沟槽中形成的凸块下金属。 凸块下冶金至少包括：一个粘合层; 一个电镀屏障层; 以及设置在粘合层和镀层阻挡层之间的一个镀覆的导电金属层。 该结构还包括形成在凸块下金属上的焊料凸块。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JPH0883888A

公开(公告)日：1996-03-26

申请号：JP20688195

申请日：1995-08-14

Applicant: IBM

Inventor： BERTIN CLAUDE LOUIS ,  HOWELL WAYNE JOHN ,  BEILSTEIN KENNETH EDWARD JR ,  DAUBENSPECK TIMOTHY HARRISON

IPC: H01L25/18 ,  H01L21/02 ,  H01L21/301 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/98 ,  H01L23/52 ,  H01L25/065 ,  H01L25/07 ,  H01L27/00 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide a technique of selectively removing a material, which is used at the time of forming an electronic module, constituted of a 'stack' of a plurality of chips, from a cut groove region (kerf region) related to the semiconductor chips. SOLUTION: This method includes a method of providing a wafer having a plurality of integrated circuit chips having a cut groove region 17 between them. Chip metallized films 15 and 16 exist in the region 17. The wafer is protected using a photolithographic process, and only the region 17 is exposed. Then, the wafer is etched, and the chip metallized films are removed from the region 17. Then the wafer is diced, and the chips are stacked to form a monolithic electronic module. The side surfaces of the module are treated to expose a transfer metallic film which extends to the side surfaces of the module. Thereby, the electrical connection of the transfer metallic film to the chips in the module is facilitated.

公开(公告)号：AT490552T

公开(公告)日：2010-12-15

申请号：AT07822110

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  MUZZY CHRISTOPHER DAVID ,  GAMBINO JEFFREY PETER ,  SAUTER WOLFGANG

IPC: H01L23/31 ,  H01L23/485

Abstract: Methods of forming wire and solder bonds are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer; forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region; forming the solder bond to the solder bond metal region while the wire bond metal region is covered; exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and forming the wire bond to the wire bond metal region. Wire bonds and solder bonds can be made accessible on a single multi-part wafer (MPW) or on a single chip, if necessary, and can be formed substantially simultaneously.

公开(公告)号：DE602007010978D1

公开(公告)日：2011-01-13

申请号：DE602007010978

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  MUZZY CHRISTOPHER DAVID ,  GAMBINO JEFFREY PETER ,  SAUTER WOLFGANG

IPC: H01L23/31 ,  H01L23/485

公开(公告)号：DE602007012367D1

公开(公告)日：2011-03-17

申请号：DE602007012367

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY PETER ,  MUZZY CHRISTOPHER DAVID

IPC: B23K1/20 ,  B23K20/24 ,  H01L25/065

公开(公告)号：AT497419T

公开(公告)日：2011-02-15

申请号：AT07822113

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY PETER ,  MUZZY CHRISTOPHER DAVID

IPC: B23K1/20 ,  B23K20/24 ,  H01L25/065

Abstract: Methods of forming wire and solder bond structures are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond; forming a protective layer over the wire bond metal region only; forming a silicon nitride layer over a silicon oxide layer over the wire bond metal region and the solder bond metal region; forming the solder bond to the solder bond metal region while maintaining the wire bond metal region covered; exposing the wire bond metal region including removing the protective layer; and forming the wire bond to the wire bond metal region. Wire bond and solder bond structures can be made accessible on a single multi-part wafer (MPW) wafer or on a single chip, if necessary.